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首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics III; 20040126-20040129; San Jose,CA; US >Modeling the laser-induced diffusible resistance process
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Modeling the laser-induced diffusible resistance process

机译：模拟激光诱导的扩散电阻过程

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摘要

Highly accurate resistances can be made by iterative laser-induced local diffusion of dopants from the drain and source of a gateless field effect transistor into its channel, thereby forming an electrical link between two adjacent p-n junction diodes. In this paper we present a complete modeling, which permits to obtain the device characteristics from process parameters. Three-dimensional (3D) temperature calculations are performed from heat diffusion equation using an apparent heat capacity formulation. Melted region determinations are satisfactory compared with in-situ real-time optical measurements of the melted region behavior. Then 3D dopant diffusion profiles are calculated using Pick's diffusion equation. Finally electronic characteristics are obtained from the new tube multiplexing algorithm for computing the Ⅰ-Ⅴ characteristic and the device differential resistance. Numerical simulations using our software are satisfactory compared with experimental Ⅰ-Ⅴ measurements.
机译：可以通过从无栅场效应晶体管的漏极和源极到源极的掺杂剂的反复激光诱导的掺杂剂的局部扩散，来形成高度精确的电阻，从而在两个相邻的p-n结二极管之间形成电连接。在本文中，我们提出了一个完整的模型，该模型允许从工艺参数中获得器件特性。使用表观热容公式从热扩散方程式进行三维（3D）温度计算。与熔融区域行为的现场实时光学测量相比，熔融区域的测定令人满意。然后，使用Pick's扩散方程计算3D掺杂剂扩散曲线。最后，从新的电子管多路复用算法获得了电子特性，用于计算Ⅰ-Ⅴ特性和器件差分电阻。与实验Ⅰ-Ⅴ测量相比，使用我们的软件进行的数值模拟是令人满意的。

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