Scribing of thin sapphire substrates with a 266-nm Q-switched solid-state laser

机译：用266nm调Q固态激光器刻划薄蓝宝石衬底

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Thin sections of single-crystal sapphire are favored as substrates for the epitaxial deposition of gallium nitride and other Ⅲ-Ⅴ and Ⅱ-Ⅵ thin films used in the fabrication of electro-optic devices such as blue-green LEDs and laser diodes. Due to difficulties commonly encountered in cutting this hard material, alternatives to traditional mechanical processing techniques are of particular interest. This paper reviews a recent study characterizing the scribing of sapphire using the tightly focused output of an ultraviolet wavelength pulsed solid-state laser.

机译：单晶蓝宝石的薄片很适合用作外延淀积氮化镓以及蓝光LED和激光二极管等电光器件的其他Ⅲ-Ⅴ和Ⅱ-Ⅵ薄膜的衬底。由于在切割这种硬质材料时通常会遇到困难，因此特别关注传统机械加工技术的替代方法。本文回顾了一项最近的研究，该研究利用紫外波长脉冲固态激光器的紧密聚焦输出表征了蓝宝石的刻划。

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《Conference on Photon Processing in Microelectronics and Photonics III; 20040126-20040129; San Jose,CA; US》|2004年|P.231-240|共10页
会议地点 San Jose CA(US)
作者
Edward C. Rea; Jr.;
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作者单位

Coherent, Inc., 5100 Patrick Henry Dr., Santa Clara, CA 95054;

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会议组织
原文格式 PDF
正文语种 eng
中图分类光电子技术的应用;物理光学（波动光学）;
关键词
laser scribing; sapphire; ultraviolet laser micro-machining; blue-green LEDs;

机译：激光划片;蓝宝石;紫外激光微加工;蓝绿色LED;

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专利

1. Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation [J] . Jaegu Kim, Jae-Hyun Kim, Sung-Hak Cho, Applied Physics . 2016,第4pta1期

机译：使用266 nm二极管泵浦固态激光辐照从蓝宝石衬底上选择性剥离GaN发光二极管
2. Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates [J] . van Look J.-R., Einfeldt S., Kruger O., Photonics Technology Letters, IEEE . 2010,第6期

机译：蓝宝石衬底上用于InGaN MQW二极管激光器刻面加工的激光划片
3. Application of few-layer WSe2/Sapphire in passively Q-switched solid-state lasers as saturable absorber and output coupler [J] . Yang Jingnan, Dou Xiaodan, Ma Yanjun, Optics & Laser Technology . 2019,第期

机译：在被动Q开关固态激光器中使用几层WSE2 / Sapphire作为可饱和吸收器和输出耦合器
4. Scribing of thin sapphire substrates with a 266-nm Q-switched solid-state laser [C] . Edward C. Rea Jr., SPIE-The International Society for Optical Engineering, SPIE v.5339 Society of Photo-Optical Instrumentation Engineers Conference on Photon Processing in Microelectronics and Photonics . 2004

机译：具有266-NM Q开关固态激光器的薄蓝宝石基板划线
5. The design of passively Q-switched solid-state lasers. [D] . Xiao, Guohua. 1998

机译：被动调Q固态激光器的设计。
6. Systematic investigation on quad-metallic AgAuPdPt and tri-metallic AuPdPt NPs through the solid-state dewetting of quad-layer Ag/Au/Pd/Pt thin films on c-plane sapphire [O] . Mao Sui, Sundar Kunwar, Puran Pandey, -1

机译：通过对c面蓝宝石上的四层Ag / Au / Pd / Pt薄膜进行固态去湿对四金属AgAuPdPt和三金属AuPdPt NP进行了系统研究
7. Selective patterning and scribing of Ti thin film on glass substrate by 532 nm picosecond laser [O] . Yung KC, Cai Z, Choy HS 2012

机译：532 nm皮秒激光对玻璃基板上的Ti薄膜进行选择性构图和划线

Scribing of thin sapphire substrates with a 266-nm Q-switched solid-state laser

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