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首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics III; 20040126-20040129; San Jose,CA; US >Near-field laser assisted localized crystal growth and nanodeposition
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Near-field laser assisted localized crystal growth and nanodeposition

机译：近场激光辅助局部晶体生长和纳米沉积

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摘要

The ability to integrate nano-components onto MEMS devices in a controlled manner has been a limiting problem in interfacing micro-nano technologies, for the current methods of growing nano-structures/wires are inflexible and cannot be supported as a post-processing step for on-chip microelectronics. The main objective of this work is to selectively induce nucleation and further achieve crystal growth of silicon nano-structures/wires at specified sites without contaminating the outlining regions. A method utilizing a Q-switched, 532 nm, 10 Hz, Nd:YAG laser coupled to cantilevered NSOM fiber probes is proposed in this deposition experiment. A finite difference time domain simulation result is offered to illustrate the spatial confinement of the laser transmission field intensity emanating from the tip aperture. A vapor phase silane mixture (1% silane, 99% helium) was introduced into the vacuum chamber at pressures ranging from 200 to 440 Torr during the deposition experiments. The deposition and growth results for silicon nano -structure/wires on silicon substrates will be presented.
机译：以可控的方式将纳米组件集成到MEMS器件中的能力一直是微纳米技术接口中的一个限制问题，因为当前生长纳米结构/导线的方法是不灵活的，不能作为后处理步骤来支持片上微电子学。这项工作的主要目的是选择性地诱导成核，并在不污染轮廓区域的情况下，在指定位置进一步实现硅纳米结构/金属丝的晶体生长。在该沉积实验中，提出了一种利用Q开关，532 nm，10 Hz，Nd：YAG激光耦合到悬臂NSOM光纤探针的方法。提供了时域有限差分仿真结果，以说明从尖端孔径发出的激光透射场强度的空间限制。在沉积实验期间，将气相硅烷混合物（1％的硅烷，99％的氦气）以200至440托的压力引入真空室。将给出在硅衬底上的硅纳米结构/线的沉积和生长结果。

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