首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics Jan 21-24, 2002 San Jose, USA >LASER INDUCED DIFFUSIBLE RESISTANCE: DEVICE CHARACTERIZATION AND PROCESS MODELING
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LASER INDUCED DIFFUSIBLE RESISTANCE: DEVICE CHARACTERIZATION AND PROCESS MODELING

机译:激光诱导的扩散电阻:设备表征和过程建模

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摘要

Highly accurate resistances can be made by iteratively laser inducing diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. We show that the current-voltage characteristics of these new microdevices are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model is proposed involving the calculation of the laser melted region in which the dopant diffusion occurs. Experimental results are well described by the proposed model.
机译:可以通过迭代激光诱导掺杂剂从无栅场效应晶体管的漏极和源极扩散到沟道中,从而在两个相邻的p-n结二极管之间形成电连接,来制造高精度电阻。我们表明,这些新型微器件的电流-电压特性在低电压下是线性的,而在较高电压下是亚线性的,其中载流子迁移率受高场的影响。提出了一种过程模型,该模型涉及计算其中发生掺杂剂扩散的激光熔化区域。实验结果很好地描述了所提出的模型。

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