Measurement of the complex index of refraction of semiconductors

机译：半导体复数折射率的测量

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A simple method is presented for measuring both the real and imaginary parts of low resistivity semiconductors. The method depends on making two reflection measurements from a bulk sample of material. One measurement is made at normal incidence and the other at an arbitrary angle of incidence greater than zero, but less than 90, degrees. Only a simple refectometer is required. The method offers an alternative to traditional, and more complex, Brewster angle measurements or ellipsometry.

机译：提出了一种简单的方法来测量低电阻率半导体的实部和虚部。该方法取决于从大量材料样本中进行两次反射测量。一种测量是在法向入射下进行的，另一种是在大于零但小于90度的任意入射角下进行的。只需要一个简单的体温计。该方法提供了一种替代传统且更复杂的布鲁斯特角测量或椭圆仪的方法。

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来源
《Conference on Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, Jul 9-11, 2002, Seattle, Washington, USA》|2002年|p.119-124|共6页
会议地点 Seattle WA(US)
作者
Richard R. Zito;
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作者单位

Richard R. Zito R D Corp., 3255 E. Lincoln St., Tucson AZ 85714;

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会议组织
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
complex index of refraction; complex refractive index;

机译：复折射率复折射率;

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Measurement of the complex index of refraction of semiconductors

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