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Ferroelectric Polymers for Advanced Polymeric Light Emitting Devices

机译:用于高级聚合物发光器件的铁电聚合物

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摘要

Advanced device structures are proposed for high-performance polymeric light emitting diodes based on the ferroelectric, pyroelectric, and piezoelectric properties of the very thin crystalline Langmuir-Blodgett films of P(VDF-TrFE). This ferroelectric incorporated polymeric light emitting diode structure has a capability to lower the barrier height for efficient carrier injection and modulate the balance of the carriers for enhanced quantum efficiency. The barrier height can be reduced up to 1 eV while the tunneling barrier width can be modulated up to 8 %. This can be achievable only using the crystalline thin films of P(VDF-TrFE).
机译:基于P(VDF-TrFE)的超薄晶体Langmuir-Blodgett膜的铁电,热电和压电特性,提出了用于高性能聚合物发光二极管的先进器件结构。这种掺入铁电的聚合物发光二极管结构具有降低势垒高度以进行有效载流子注入的能力,并调节载流子的平衡以提高量子效率。势垒高度可以降低到1 eV,而隧穿势垒宽度可以调制到8%。仅使用P(VDF-TrFE)的结晶薄膜才能实现。

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