ZnO Homoepitaxy

机译：ZnO同质外延

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper investigates the properties of homoepitaxial growth of ZnO. High quality bulk ZnO crystals have been produced by melt growth techniques in addition to ZnO thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on bulk ZnO substrates(Zinc side and Oxygen side). The photoluminescence showed the dominance of strong and narrow band due to the band edge emissions for undoped ZnO. UV transmission showed sharp transition indication good crystal quality. High resolution x-ray diffraction measurements (HRXRD) along with rocking curve showed excellent crystal quality with full width at half maximum values close to 100 arc seconds.

机译：本文研究了ZnO的同质外延生长特性。除了通过金属有机化学气相沉积（MOCVD）在块状ZnO衬底（锌侧和氧侧）上生长的ZnO薄膜外，还通过熔体生长技术生产了高质量的块状ZnO晶体。由于未掺杂的ZnO的能带边缘发射，光致发光显示出强能带和窄能带占主导地位。紫外线透射率显示出急剧的转变，表明晶体质量良好。高分辨率x射线衍射测量（HRXRD）以及摇摆曲线显示出卓越的晶体质量，其全宽度为接近100弧秒的一半最大值。

著录项

来源
《Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US》|2004年|P.220-227|共8页
会议地点 San Jose CA(US)
作者
J. Nause; S. Ganesan; B.Nemeth;
展开▼
作者单位

Cermet, Inc., 1019 Collier Road, Atlanta GA 30318;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词

相似文献

外文文献
中文文献
专利

1. Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates [J] . Chauveau J.-M., Teisseire M., Kim-Chauveau H., Applied Physics Letters . 2010,第8期

机译：同质外延对a平面ZnO衬底上非极性（Zn，Mg）O / ZnO量子阱性质的好处
2. Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions [J] . N. Le Biavan, M. Hugues, M. Montes Bajo, Applied Physics Letters . 2017,第23期

机译：非极性ZnO /（Zn，Mg）O多量子阱的同质外延：从精确的生长控制到子带间跃迁的观察
3. Substrate polarity and surface pretreatment temperature dependence of ZnO homoepitaxy [J] . Gu Ran, Tang Kun, Gu Shulin, Applied Surface Science . 2016,第JANa15期

机译：ZnO同质外延的衬底极性和表面预处理温度依赖性
4. Advances in nonpolar ZnO homoepitaxy: 1D surface nanostructure and electron transport [C] . Hiroaki Matsui, Hitoshi Tabata Zinc Oxide Materials and Devices II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6474 . 2007

机译：非极性ZnO同质外延研究：一维表面纳米结构和电子传输
5. Analysis of the Temperature Dependent Band-edge Distribution as a Function of Annealing in ZnO and ZnO-Based Thin Film Alloys [D] . Canul, Amrah. 2020

机译：ZnO和ZnO基薄膜合金退火的函数的温度依赖带边缘分布分析
6. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System [O] . Xiwei Wang, Peng Duan, Zhenzhong Cao, 2019

机译：MPCVD系统中300托压力下单晶金刚石的同质外延生长
7. Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) [O] . Piero Mazzolini, Andreas Falkenstein, Zbigniew Galazka, 2020

机译：金属交换催化分子束外延（MEXCAT-MBE）（100）β-GA2O3同性端（100）β-GA2O3同性恋期间的耳塞相关的步骤流动和生长速率增强

ZnO Homoepitaxy

摘要

著录项

相似文献

相关主题

期刊订阅