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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Higher operating temperature, high performance infrared focal plane arrays
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Higher operating temperature, high performance infrared focal plane arrays

机译：更高的工作温度，高性能的红外焦平面阵列

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摘要

We present results from indium antimonide and mercury cadmium telluride IR detector arrays operating at temperatures above 80K, whilst retaining high performance. Multi-layer epitaxial growth is employed to minimize thermally generated leakage currents, through the use of structures designed to control transport of charge generated outside of the active region to the diode junction and to minimize Auger generation within the active region. This enables an increase in operating temperature of a few tens of degrees in the case of background limited Ⅲ-Ⅴ devices, and thermoelectric operation of MCT detectors sensitive to the MWIR band. We also discuss the effects of reverse bias on diodes to actively suppress the Auger generation, and the consequent introduction of 1/f noise. Optical concentrators can be used to minimize the volume of detector material in order to gam further increases in temperature. The concentrators, based on Winston cone designs, are fabricated at each pixel by reactive ion etching directly into the detector material and its substrate, and allow a theoretical reduction in volume of a factor of up to 16. This translates into a potential additional increase in temperature of several tens of degrees.
机译：我们介绍了在80K以上温度下运行的同时保留高性能的锑化铟和碲化汞镉镉红外探测器阵列的结果。通过使用设计用于控制在有源区外部产生的电荷向二极管结的传输和使有源区内的俄歇产生最小化的结构，采用多层外延生长来最小化热产生的泄漏电流。在背景受限的Ⅲ-Ⅴ器件的情况下，这可以使工作温度提高几十度，并且对MWIR波段敏感的MCT检测器的热电操作。我们还将讨论反向偏置对二极管的影响，以主动抑制俄歇产生，并由此引入1 / f噪声。可以使用光学集中器来最小化检测器材料的体积，以控制温度的进一步升高。基于Winston锥设计的集中器是通过在反应器材料及其衬底中直接进行反应性离子蚀刻而在每个像素处制造的，理论上体积可减小多达16倍。这意味着潜在的附加增加温度几十度。

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