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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Advanced IR Detector Design at SCD: From D~3C~(TM) to ABCS
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Advanced IR Detector Design at SCD: From D~3C~(TM) to ABCS

机译：SCD的高级红外探测器设计：从D〜3C〜（TM）到ABCS

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Over the past 27 years, SCD has developed and manufactured more than 30 types of Infrared Detector, both with support from the Israeli MOD and in cooperation with institutions and companies such as the Technion, Soreq NRC, RICOR and RAFAEL. SCD''s current production line includes Hg_(1-x)Cd_xTe (MCT) devices with up to 480x6 elements operating in Time Delay and Integration (TDI) mode and InSb Focal Plane Arrays (FPAs) with up to 640x512 elements, all available in various configurations including fully integrated Detector-Dewar-Cooler (DDC) packages. Such DDCs have been designed to range from the very small to the very large. At one end the Piccolo DDC is a small, low weight and power detector, ideal for compact low cost imagers such as handheld IR cameras. At the other end, we manufacture a very long (2048x16) bi-directional TDI InSb detector designed for "whiskbroom scanning" systems. This device consists of four modules precisely butted on a single substrate, with each 512 x16 module connected to a single signal processor. In 2003, SCD announced its new breakthrough Digital Read Out Integrated Circuit (ROIC) technology: Digital DDC or D~3C~(™). This readout system, with excellent performance and increased flexibility is the first in a series of new imaging solutions that SCD is developing to meet future demands of noise and power reduction, combined with greater wavelength selectivity. To continue along this path we have also been developing our new ABCS (Antimonide Based Compound Semiconductor) technology, which we first reported in 2002. The ABCS program, combining SCD''s existing strengths in InSb FPA systems with new concepts in bandgap engineering and smart structure design, is aimed at multispectral IR detectors operating at higher temperatures. This review discusses some of the key trends at SCD as described above. After surveying the performance of SCD''s current InSb technology, SCD''s evolution towards the next generations will be described, including the achievements and potential of the D~3C~(™) and ABCS systems.
机译：在过去的27年中，SCD在以色列国防部的支持下以及与Technion，Soreq NRC，RICOR和RAFAEL等机构和公司的合作下，开发和制造了30多种类型的红外探测器。 SCD当前的生产线包括Hg_（1-x）Cd_xTe（MCT）器件，该器件具有多达480x6的元件以时延和积分（TDI）模式运行，并且具有多达640x512的InSb焦平面阵列（FPA），均可用具有各种配置，包括完全集成的Detector-Dewar-Cooler（DDC）软件包。这种DDC的设计范围从很小到很大。一方面，Piccolo DDC是一种小型，重量轻且功率低的检测器，非常适合紧凑型低成本成像器（如手持式红外摄像机）。在另一端，我们制造了一种非常长的（2048x16）双向TDI InSb检测器，该检测器专为“ whiskbroom扫描”系统而设计。该设备由四个模块精确地对接在单个基板上，每个512 x16模块连接到单个信号处理器。 2003年，SCD宣布了其新的突破性数字读出集成电路（ROIC）技术：数字DDC或D〜3C〜（™）。这种具有出色性能和更大灵活性的读出系统是SCD正在开发的一系列新成像解决方案中的第一个，可以满足未来对噪声和功耗降低的需求，并具有更大的波长选择性。为了继续沿着这条道路前进，我们还一直在开发我们的新ABCS（基于锑化物的化合物半导体）技术，该技术于2002年首次报告。ABCS计划将SCD在InSb FPA系统中的现有优势与带隙工程学和智能结构设计，旨在在更高温度下运行的多光谱红外探测器。这篇评论讨论了如上所述的SCD的一些关键趋势。在调查了SCD当前InSb技术的性能之后，将描述SCD向下一代的发展，包括D〜3C〜（TM）和ABCS系统的成就和潜力。

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