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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Optical absorption and transient photobleaching in solutions of surfactant encapsulated and DNA wrapped single-walled carbon nanotubes
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Optical absorption and transient photobleaching in solutions of surfactant encapsulated and DNA wrapped single-walled carbon nanotubes

机译：表面活性剂包裹和DNA包裹的单壁碳纳米管溶液中的光吸收和瞬时光漂白

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摘要

Optical absorption and transient photobleaching in solutions of surfactant encapsulated and DNA wrapped single-walled carbon nanotubes (SWNTs) are studied. Optical transitions between van Hove singularities are red shifted in solutions of DNA wrapped SWNTs compared with transitions in solutions of sodium dodecyl sulfate (SDS) encapsulated SWNTs. This red shift may be due to changes in the local surrounding dielectric constant and corresponding changes in charge screening. Transient photobleaching at the E_(11) transition of semiconducting SWNTs is observed in both solutions of SDS encapsulated SWNTs and DNA wrapped SWNTs in response to optical excitation at corresponding E_(22) transitions, and the saturation of photobleaching at high excitation intensities greater than 500 W cm~(-2) is studied. It is found that the photobleaching intensity does not saturate as significantly in solutions of DNA wrapped SWNTs as in solutions of SDS isolated SWNTs. Lastly, using degenerate, delayed pump-probe characterization, the temporal relaxation of excited charge carriers is investigated. Measured decays are characterized by both fast and slow processes. The slow decay time constant across the band gap of semiconducting SWNTs is fit to 120 ps for SDS encapsulated SWNTs and 73 ps for DNA wrapped SWNTs.
机译：研究了表面活性剂包裹和DNA包裹的单壁碳纳米管（SWNTs）溶液中的光吸收和瞬时光漂白。与包裹有十二烷基硫酸钠（SDS）的SWNT溶液相比，DNA包裹的SWNT溶液在van Hove奇异点之间的光学跃迁发生了红移。这种红移可能是由于局部周围介电常数的变化以及电荷屏蔽的相应变化所致。响应于相应E_（22）跃迁的光激发，在SDS封装的SWNT和DNA包裹的SWNT溶液中均观察到半导体SWNT的E_（11）跃迁处的瞬时光漂白，并且在大于500的高激发强度下光漂白的饱和度研究了W cm〜（-2）。发现在DNA包裹的SWNT溶液中光漂白强度没有像在SDS分离的SWNT溶液中那样显着饱和。最后，使用简并的​​，延迟的泵浦探针表征，研究了激发的载流子的时间弛豫。测得的衰减以快速和缓慢的过程为特征。跨半导SWNT的带隙的慢衰减时间常数对于SDS封装的SWNT合适为120 ps，对于DNA包裹的SWNT合适为73 ps。

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