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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm
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Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm

机译：二氧化硅中Si光学材料中Er的1.5 nm纳米晶敏化

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摘要

Nanocrystal Si (nc-Si) sensitization of Er in a silica matrix to obtain high optical activity in a Si-compatible material is investigated. Er-doped silicon-rich silicon oxide (SRSO) films, which consist of nc-Si embeddded inside an SiQ_2 matrix, were deposited by electron-cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using SiH_4 and O_2 with concurrent sputtering of Er followed by a high temperature anneal. For comparison, Er-free SRSO films were also deposited. Detailed investigation of processing conditions indicates that an annealing process consisting of 30 min anneal at 950 ℃ without hydrogenation to be optimum for activation of Er. Investigation of MOS diode structure with Er-doped and Er-free SRSO films indicates that a mesa-type structure with n~+ poly-silicon top contact, p-type substrate, and SRSO Si content of less than 40 % gives the best diode performance. Er-free SRSO diodes fabricated using the optimum conditions show electroluminescence under forward bias. Er-doped SRSO diodes show photoresponse at 1.54 μm due to nanocrystal - Er interactions, showing the promise of developing integrated, Si-based 1.54 μm light detectors for integrated microphotonic devices.
机译：研究了在二氧化硅基体中对Er进行纳米晶Si（nc-Si）增感，以在与硅相容的材料中获得较高的光学活性。通过SiH_2和O_2的电子回旋共振等离子体增强化学气相沉积（ECR-PECVD）沉积掺Er的富硅氧化硅（SRSO）薄膜，该薄膜嵌入SiQ_2基质中。 Er，然后进行高温退火。为了进行比较，还沉积了无Er的SRSO膜。对工艺条件的详细研究表明，在950℃退火30分钟且不加氢的退火工艺是激活Er的最佳方法。对掺有Er和无Er的SRSO膜的MOS二极管结构的研究表明，具有n〜+多晶硅顶部接触，p型衬底和SRSO Si含量小于40％的台面型结构提供了最佳的二极管性能。在最佳条件下制造的无SRSO二极管在正向偏置下显示出电致发光。由于纳米晶-Er相互作用，掺Er的SRSO二极管在1.54μm处显示出光响应，这表明有望为集成的微光子器件开发集成的，基于Si的1.54μm的光检测器。

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