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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Nanophotonic Applications for Silicon-On-Insulator (SOI)
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Nanophotonic Applications for Silicon-On-Insulator (SOI)

机译：绝缘体上硅（SOI）的纳米光子应用

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摘要

Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world. This paper will report on fabrication techniques used to form nano-structured silicon wires on an insulating structure that is amenable to interfacing nanostructured sensors with high-performance microelectronic circuitry for practical implementation. Nanostructures formed on silicon-on-sapphire can also exploit the transparent substrate for novel device geometries. This research harnesses the unique properties of a high-quality single crystal film of silicon on sapphire and uses the film thickness as one of the confinement dimensions. Lateral arrays of silicon nanowires were fabricated in the thin (5 to 20 nm) silicon layer and studied. This technique offers simplified contact to individual wires and provides wire surfaces that are more readily accessible for controlled alteration and device designs.
机译：绝缘体上硅是一种用于微电子设备的大规模集成的成熟技术。该技术还为纳米光子器件的开发提供了潜力，并使这种器件与宏观世界相接。本文将报告用于在绝缘结构上形成纳米结构硅线的制造技术，该结构适合将纳米结构传感器与高性能微电子电路接口以便实际实施。在蓝宝石上的硅上形成的纳米结构还可以利用透明基板实现新颖的器件几何形状。这项研究利用了蓝宝石上高质量硅单晶膜的独特性能，并将膜厚作为限制尺寸之一。在薄的硅层（5至20 nm）中制造并研究了硅纳米线的横向阵列。该技术简化了与单根导线的接触，并提供了易于控制的更改和设备设计易于接近的导线表面。

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