Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications

机译：用于中红外器件应用的新型PbSrSe薄膜的光电研究

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We review our recently combined study of temperature-dependent photoluminescence, absorption, and photocurrent measurements with theoretical models on PbSrSe thin films grown by molecular beam epitaxy for the key properties of PbSrSe thin films and their microstructures. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSrSe/PbSe multiple quantum well (MQW) mid-infrared laser systems, which opens the way for the design of Ⅳ-Ⅵ MQW mid-infrared lasers. The infrared detection of PbSrSe thin films has been demonstrated at different temperatures, where the spectral intensity and wavelength coverage are determined by the band gap and the film thickness. The bias- and frequency-dependent capacitance characteristics have also been investigated in detail.

机译：我们回顾了我们最近对结合温度依赖性光致发光，吸收和光电流测量的研究与分子束外延生长的PbSrSe薄膜的理论模型有关PbSrSe薄膜及其微结构的关键特性。在PbSrSe / PbSe多量子阱（MQW）中红外激光系统中成功地采用了带隙，有效质量和折射率的经验公式，这为设计Ⅳ-ⅥMQW中红外激光器开辟了道路。。已经证明了在不同温度下PbSrSe薄膜的红外检测，其中光谱强度和波长覆盖范围由带隙和膜厚决定。还详细研究了与偏置和频率相关的电容特性。

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来源
《Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US》|2004年|P.40-51|共12页
会议地点 San Jose CA(US)
作者
W.Z. Shen;
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作者单位

Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, PR. China;

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会议组织
原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词
optoelectronic investigation; PbSrSe; mid-infrared; device applications;

机译：光电研究; PbSrSe;中红外;器件应用;

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1. Study of optical constants in PbSrSe thin films for mid-infrared laser application [J] . Yang HF., Shen WZ., Pang QJ. Journal of Physics. Condensed Matter . 2002,第8期

机译：中红外激光应用中PbSrSe薄膜的光学常数研究
2. Investigation of crystallized germanium thin films and germanium/silicon heterojunction devices for optoelectronic applications [J] . Lee Won-Jae, Sharp James, Umana-Membreno Gilberto A., Materials science in semiconductor processing . 2015,第Null期

机译：用于光电应用的结晶锗薄膜和锗/硅异质结器件的研究
3. (Zn + Co) co-doped CdO thin films with improved figure of merit values and ferromagnetic orderings with low squareness ratio well suited for optoelectronic devices and soft magnetic materials applications [J] . T. Noorunnisha, M. Suganya, M. Karthika, Applied Physics . 2020,第10期

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4. Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications [C] . W.Z. Shen, SPIE-The International Society for Optical Engineering, SPIE v.5359 Conference on quantum sensing and nanophotonic devices . 2004

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5. Transparent conducting oxides towards next-generation optoelectronics: Novel function design, thin film growth, and applications in optoelectronic devices. [D] . Wang, Lian. 2006

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6. Contact printing of colloidal nanocrystal thin films for hybrid organic/quantum dot optoelectronic devices [O] . Matthew J. Panzer, *, Katherine E. Aidala, 2012

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Optoelectronic investigation of novel PbSrSe thin films for mid-infrared device applications

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