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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Quaternary InAlGaN based deep UV LED with high-Al-content p-type AlGaN
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Quaternary InAlGaN based deep UV LED with high-Al-content p-type AlGaN

机译：具有高Al含量p型AlGaN的基于InAlGaN的第四季深紫外LED

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摘要

For the realization of 250-350 nm band deep ultraviolet (UV) emitters using group Ⅲ-nitride materials, it is required to obtain high-efficiency UV emission and hole conductivity for wide-bandgap (In)AlGaN. For achieving high-efficiency deep UV emission, it is quite effective to use In segregation effect which has been already used for InGaN blue emitting devices. We have demonstrated high-efficiency UV emission by introducing several percent of In into AlGaN in the wavelength range of 300-360 nm at room temperature with an In segregation effect. The emission fluctuation in the submicron region due to In segregation was clearly observed for the quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15 % was estimated from quaternary InAlGaN based single quantum well (SQW) at around 350 nm at room temperature. Such a high efficiency UV emission can be obtained even on high threading dislocation density buffers. Also, hole conductivity was obtained for high Al content (> 53%) Mg-doped AlGaN by using alternative gas flow growth process in metal-organic vapor phase epitaxy (MOVPE). Using these techniques we fabricated 310 nm band deep UV light-emitting diodes (LEDs) with quaternary In_xAl_yGa_(1-x-y)N active region. We achieved output power of 0.4 mW for a 308 nm LED and 0.8 mW for a 314 nm LED under room temperature pulsed operation.
机译：为了使用Ⅲ族氮化物材料实现250-350 nm波段的深紫外（UV）发射器，需要获得宽带（In）AlGaN的高效紫外发射和空穴电导率。为了实现高效的深紫外发射，使用InGaN隔离效应非常有效，In隔离效应已经用于InGaN蓝色发射器件。通过在室温下在300-360 nm的波长范围内向AlGaN中引入百分之几的In并具有In隔离效应，我们已经证明了高效的紫外线发射。对于四元InAlGaN外延层，清楚地观察到由于In偏析而导致的亚微米区域中的发射波动。根据四元InAlGaN基单量子阱（SQW）在室温下约350 nm处估计的内部量子效率高达15％。即使在高螺纹位错密度缓冲液上也可以获得这种高效的紫外线发射。此外，通过在金属有机气相外延（MOVPE）中使用替代的气流生长工艺，获得了高Al含量（> 53％）的Mg掺杂AlGaN的空穴电导率。使用这些技术，我们制造了具有四级In_xAl_yGa_（1-x-y）N有源区的310 nm带深紫外发光二极管（LED）。在室温脉冲操作下，对于308 nm LED，我们实现了0.4 mW的输出功率，对于314 nm LED，实现了0.8 mW的输出功率。

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