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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Semiconductor Lasers for Quantum Sensing
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Semiconductor Lasers for Quantum Sensing

机译：用于量子感测的半导体激光器

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Semiconductor lasers can be used simultaneously as optical sources and optical sensors, as they are extremely sensitive to a small amount of coherent optical feedback. We present a survey on experimental results on optical feedback in semiconductor lasers and on different approaches to describe its effect on the laser properties. We show that for long and moderate long external cavities (hundreds of meters down to centimeters) the Lang-Kobayashi delay model, multiple delays and multimode delay rate equation models are in very good agreement with experiments on edge emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs). We present examples of frequency and polarization mode hopping, periodic and quasiperiodic behavior, different routes to chaos, regular pulse packages, high frequency pulsations and stochastic and coherence resonance, that all have been experimentally and numerically demonstrated. Suitable models for studying laser diodes subject to optical feedback from extremely short external cavity, or ESEC (of the order of the wavelength) are the composite cavity and the multimode butt coupling models that either consider the field amplitudes after multiple reflections in the external cavity (EC) as stationary or treat the whole compound cavity at once. Numerical and experimental studies showed that optical feedback in ESEC leads to detectable change of the laser output power or the voltage drop over the laser for a small change of either the phase or the optical feedback strength. As an example, we discuss experimental and numerical results on spectral and polarization properties of VCSELs subject of insensitive optical feedback from ESEC. The wavelength and the current of polarization switching between the two linearly polarized fundamental modes of the VCSEL are periodically modulated with the external cavity length. High contrast polarization switching is thus possible for quarter-wavelength change of external cavity length. In the case of EEL we experimentally demonstrate that with changing the length of the EC the emitted power, the wavelength and the laser voltage are periodically modulated. We explain the longitudinal mode-hopping between the neighboring composite cavity modes followed by large jumps at the external cavity frequency splitting as a result of the spectral modulation of the effective losses of the composite cavity system.
机译：半导体激光器可以同时用作光源和光学传感器，因为它们对少量的相干光反馈极为敏感。我们目前就半导体激光器中光反馈的实验结果以及描述其对激光器性能的影响的不同方法进行了调查。我们证明，对于长和中等长的外腔（数百米至厘米），Lang-Kobayashi延迟模型，多重延迟和多模延迟率方程模型与边缘发射激光器（EEL）和垂直发射激光器的实验非常吻合。腔表面发射激光器（VCSEL）。我们提供了频率和极化模式跳变，周期和准周期行为，通向混沌的不同路径，规则脉冲包，高频脉动以及随机和相干共振的示例，所有这些均已通过实验和数值方法进行了证明。复合型腔和多模对接耦合模型是研究受到极短的外腔或ESEC​​（波长级）的光反馈影响的激光二极管的模型，它们都考虑了外腔多次反射后的场振幅（ EC）固定或立即处理整个复合腔。数值和实验研究表明，对于相位或光反馈强度的微小变化，ESEC中的光反馈导致可检测到的激光输出功率变化或激光器上的电压降。例如，我们讨论了来自ESEC的不敏感光反馈的VCSEL的光谱和偏振特性的实验和数值结果。 VCSEL的两个线性极化基本模式之间切换的波长和极化电流会通过外腔长度进行周期性调制。因此，对于外腔长度的四分之一波长变化，可以进行高对比度偏振切换。在EEL的情况下，我们通过实验证明，通过改变EC的长度，可以周期性地调制发射功率，波长和激光电压。我们解释了由于复合腔系统有效损耗的频谱调制而导致的相邻复合腔模式之间的纵向模式跳跃，然后在外腔频率分裂处出现了大的跳跃。

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