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首页> 外文会议>Conference on X-Ray and Gamma-Ray Instrumentation for Astronomy XI 2-4 August 2000 San Diego, USA >Silicon drift chamber with extended energy range
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Silicon drift chamber with extended energy range

机译：硅漂移室具有更大的能量范围

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摘要

The requirement for future X-ray Astronomy instrumentation to exhibit a combination of good energy resolution and an extended energy range may be filfilled by the development of a X ray detectors made from coupling a Silicon Drift Chamber (SDC), to a scintillation crystal. We report on such a detector made with an SDC of 3mm diameter and using a Caesium Ioide (CsI(T1)) scintillator. The radiation input window is located on the Si side of the assembly so than soft X-rays are directly detected by the SDC. This allows a minimum threshold of about 1 keV at 0 deg C to be obtained. The Silicon Drift Chamber acts also as a photodiode able to detect the scintillation light produced by the CsI(T1), thus extending the energy range of such a device up to some MeV. The discrimination of events between these two detection layers is performed by using a pulse shape discriminator in order to differentiate between the different rise times of the collected charge. The detector concept is discussed on the basis of the results already achieved and the future developments foreseen.
机译：通过将硅漂移室（SDC）耦合到闪烁晶体制成的X射线探测器的开发，可以满足对未来X射线天文学仪器展现出良好的能量分辨率和扩展的能量范围的要求。我们报告了这样一种检测器，该检测器由直径3mm的SDC和碘化铯（CsI（T1））闪烁体制成。辐射输入窗口位于组件的Si侧，因此SDC可以直接检测到软X射线。这允许在0℃下获得约1keV的最小阈值。硅漂移室还充当光电二极管，能够检测由CsI（T1）产生的闪烁光，从而将此类器件的能量范围扩展至某些MeV。为了区分收集的电荷的不同上升时间，通过使用脉冲形状鉴别器对这两个检测层之间的事件进行鉴别。在已经取得的成果和可预见的未来发展的基础上，讨论了探测器的概念。

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