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首页> 外文会议>Conference on X-Ray Mirrors, Crystals, and Multilayers Jul 30-31, 2001, San Diego, USA >Influence of deposition parameters on the reflectivity of multilayer hard x-ray mirrors
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Influence of deposition parameters on the reflectivity of multilayer hard x-ray mirrors

机译：沉积参数对多层硬X射线镜反射率的影响

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摘要

We present the results of a study of the influence of the deposition process parameters on the X-ray reflectivity of multilayer mirrors for applications at energies above 10 keV. The coating process used is DC magnetron sputtering and we have begun an optimization analysis for two material combinations: W/Si and Pt/C. The following process parameters were considered: argon pressure, distance between cathodes and substrate, and sputtering cathode currents. The samples are coated on 2" polished silicon wafers and their X-ray reflectivity is measured by performing a specular scan with an 8.05 keV (Cu K_α) X-ray beam. The reflectivity scans were analyzed with the IMD software and the fitted interface roughness values were correlated with the deposition parameters. The analysis of variance (ANOVA) statistical treatment of the data allows the determination of the contribution of each process parameter to the reflectivity and establishes which of the parameters need tighter control.
机译：我们提出了在能量大于10 keV的情况下沉积工艺参数对多层反射镜的X射线反射率的影响的研究结果。所用的涂层工艺是直流磁控溅射，我们已经开始对两种材料组合（W / Si和Pt / C）进行优化分析。考虑了以下工艺参数：氩气压力，阴极与基板之间的距离以及溅射阴极电流。将样品涂覆在2英寸抛光的硅晶片上，并通过使用8.05 keV（CuK_α）X射线束进行镜面扫描来测量其X射线反射率。使用IMD软件和拟合的界面粗糙度分析反射率扫描值与沉积参数相关联，对数据进行方差分析（ANOVA）统计处理可以确定每个工艺参数对反射率的贡献，并确定哪些参数需要更严格的控制。

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