首页> 外文会议>Conference on Silicon-Based and Hybrid Optoelectronics Ⅳ Jan 23-24, 2002, San Jose, USA >Design, fabrication and testing of an integrated Si-based light modulator: experimental evidence of plasma redistribution
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Design, fabrication and testing of an integrated Si-based light modulator: experimental evidence of plasma redistribution

机译:集成硅基光调制器的设计,制造和测试:等离子体重新分布的实验证据

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The implementation of efficient Si-based optical functions has attracted a considerable interest in the last years since it would allow the use of the Si technology for the realisation of integrated optoelectronic devices. We have fabricated and characterised a novel Si-based light modulator working at the standard communication wavelength of 1.54μm. It consists of a three terminal Bipolar Mode Field Effect Transistor integrated with a silicon RIB waveguide on epitaxial Si wafers. The optical channel of the modulator is embodied within its vertical electrical channel. Light modulation is obtained through the formation of a plasma of carriers, inside the optical channel, that produces an increase of the absorption coefficient. Fast modulation is achieved by moving the plasma inside and outside the optical channel by properly biasing the control electrode. The devices have been fabricated using clean room processing. Detailed electrical characterisation and device simulation confirm that strong conductivity modulation and plasma formations in the channel are achieved. The plasma distribution in the device under different bias conditions has been directly derived from Emission Microscopy analysis. The expected device performances in terms of modulation depth and speed will be presented and discussed.
机译:在过去的几年中,有效的基于Si的光学功能的实现吸引了相当大的兴趣,因为它将允许使用Si技术来实现集成光电器件。我们已经制造并表征了一种新型的基于Si的光调制器,其工作在1.54μm的标准通信波长下。它由一个三端双极型场效应晶体管和一个外延Si晶片上的硅RIB波导集成而成。调制器的光通道包含在其垂直电通道内。通过在光通道内部形成载流子的等离子体来获得光调制,从而增加吸收系数。通过适当偏置控制电极,使等离子体在光通道内外移动,可以实现快速调制。这些设备是使用无尘室工艺制造的。详细的电特性描述和器件仿真证实,可以在通道中实现强电导率调制和等离子体形成。装置在不同偏压条件下的血浆分布已直接从发射显微镜分析得出。将介绍和讨论在调制深度和速度方面预期的设备性能。

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