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首页> 外文会议>Conference on Silicon for the Chemical Industry VI; 20020617-20020621; Loen; NO >Effects of Phosphorus on the Coking of Contact Masses Containing High Purity and Technical Grade Silicon
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Effects of Phosphorus on the Coking of Contact Masses Containing High Purity and Technical Grade Silicon

机译：磷对高纯度工业级硅接触物料结焦的影响

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摘要

The effect of phosphorus and impurities present in silicon on the coking of the reaction mass for the direct process was investigated as a function of time, temperature, and MeCl partial pressure. Temperature programmed oxidation (TPO) was used to evaluate total coke formation. Apparent activation energies and reaction orders vs. MeCl for coke formation were determined. The impurities in silicon did not appear to significantly impact coke formation. The presence of phosphorus appeared to slightly increase coke formation at lower MeCl pressures ( ≤ 1 atm). At MeCl pressures of 2 and 3 atm, phosphorus had little impact at the lower temperatures ( < 593 K), but decreased coke formation at the higher temperatures (613 K). This may result from the ability of phosphorus to form and stabilize a coke precursor such as a methyl radical.
机译：研究了硅中存在的磷和杂质对直接过程反应物料结焦的影响，该影响是时间，温度和MeCl分压的函数。使用程序升温氧化（TPO）评估总焦炭形成。确定了对于焦炭形成的表观活化能和反应阶数对MeCl。硅中的杂质似乎并未显着影响焦炭的形成。在较低的MeCl压力（≤1 atm）下，磷的存在似乎会略微增加焦炭的形成。在2和3 atm的MeCl压力下，磷在较低的温度（<593 K）下影响很小，但在较高的温度（613 K）下焦炭形成减少。这可能是由于磷形成并稳定了焦炭前体（例如甲基）的能力所致。

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