Investigations on the Reactivity of Atomic Silicon

机译：原子硅反应性的研究

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Based on a screening study with a purposive selection of substrate molecules the versatile reactivity of silicon atoms under matrix conditions (argon, 10 K) has been studied. The observations can be turned into a general scheme ravelling the characteristic features which govern the omnipotent behavior of silicon atoms. It is claimed that the results achieved in the atomic/molecular dimension may disclose new aspects upon the peculiar properties of porous or even bulk silicon.

机译：基于筛选底物分子的筛选研究，研究了硅原子在基质条件（氩气，10 K）下的通用反应性。可以将这些观察结果转变为一个笼统的方案，破坏了控制硅原子万能行为的特征。声称在原子/分子尺度上获得的结果可能揭示了多孔或什至块状硅的特殊性质的新方面。

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来源
《Conference on Silicon for the Chemical Industry VI; 20020617-20020621; Loen; NO》|2002年|P.285-297|共13页
会议地点 Loen(NO)
作者
G. Maier; H. P. Reisenauer; H. Egenolf; J. Glatthaar; L. Roesch;
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作者单位

Institut fuer Organische Chemie der Universitaet, D-35392 Giessen, Germany;

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原文格式 PDF
正文语种 eng
中图分类硅Si;
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机译：氮化硅原子层沉积过程中不同表面部位与氯化硅的反应性
2. Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride [J] . Yusup Luchana L., Park Jae-Min, Noh Yong-Ho, RSC Advances . 2016,第72期

机译：氮化硅原子层沉积过程中不同表面部位与氯化硅的反应性
3. Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films' surface layers containing silicon nanocrystals [J] . Terekhov V.A., Turishchev S.Y., Pankov K.N., Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2011,第5期

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4. Investigations on the Reactivity of Atomic Silicon [C] . G. Maier, H. P. Reisenauer, H. Egenolf, Conference on silicon for the chemical industry . 2002

机译：原子硅反应性的研究
5. Kinetic studies of growth of silicon and silicon germanium thin films: Gas-surface reactivity, germanium surface segregation, and the effect of coincident atomic hydrogen. [D] . Zheng, Yongjun. 2000

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8. Reactions of Atomic Silicon II: Observations on the Reactivity of Silene Intermediates. [R] . Owen, P. W., Skell, P. S. 1972

机译：原子硅II的反应：对silene中间体反应性的观察。

Investigations on the Reactivity of Atomic Silicon

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