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首页> 外文会议>Conference on Silicon Photonics; 20080121-24; San Jose,CA(US) >Optical soliton in silicon-on-insulator waveguides
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Optical soliton in silicon-on-insulator waveguides

机译：绝缘体上硅波导中的光孤子

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摘要

We show that optical soliton can be realized in very short waveguides (5 mm long) fabricated on silicon-on-insulator (SOI) wafers. By tailoring their zero-dispersion wavelength and launching optical pulses at only sub pico-joule energy level close to this wavelength, we have observed significant spectral narrowing due to the pulse reshaping during the formation of optical soliton, which is in strong contrast to previous measurements. The extent of spectral narrowing depends on the carrier wavelength of the input pulse in the normal dispersion region and spectral broadening is observed in normal dispersion region. We simulate femto-second pulses' propagation in such waveguide. Simulation results show the evolution of the pulse shape in both time domain and frequency domain when the pulse energy is increased from very low level, when nonlinear effects are negligible, to the energy level we used in our experiment. The simulation results agree well with our observation. To be best of our knowledge, this is the first report on soliton in silicon waveguides.
机译：我们表明，可以在绝缘体上硅（SOI）晶片上制造的非常短的波导（5毫米长）中实现光孤子。通过调整它们的零色散波长并仅在接近该波长的亚皮焦耳能级发射光脉冲，我们观察到由于光孤子形成期间的脉冲整形，光谱明显变窄，这与之前的测量结果形成了鲜明的对比。光谱变窄的程度取决于在正常色散区域中输入脉冲的载波波长，并且在正常色散区域中观察到光谱变宽。我们在这种波导中模拟飞秒脉冲的传播。仿真结果表明，当脉冲能量从非常低的水平（非线性影响可忽略不计）增加到我们在实验中使用的能量水平时，脉冲形状在时域和频域上都发生了演变。仿真结果与我们的观察非常吻合。据我们所知，这是硅波导中孤子的​​第一份报告。

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