首页> 外文会议>Conference on Silicon Photonics; 20080121-24; San Jose,CA(US) >An all-silicon channel waveguide fabricated using direct proton beam writing
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An all-silicon channel waveguide fabricated using direct proton beam writing

机译:使用直接质子束写入制造的全硅通道波导

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We report a novel technique for the fabrication of an all-silicon channel waveguide using direct proton beam writing and subsequent electrochemical etching. A focused beam of high energy protons is used to selectively inhibit porous silicon formation in the irradiated regions. By over-etching beyond the ion range, the irradiated region becomes surrounded by porous silicon cladding. Waveguide characterization carried out at 1550 nm on the proton irradiated waveguide shows that the propagation losses improve significantly from 20+2 dB/cm to 9±2 dB/cm after vacuum annealing at 800℃ for 1 hour.
机译:我们报告了一种使用直接质子束写入和随后的电化学刻蚀制造全硅通道波导的新技术。高能量质子的聚焦束用于选择性地抑制在被照射区域中的多孔硅的形成。通过超过离子范围的过度蚀刻,被照射的区域被多孔硅包层包围。在质子辐照的波导上于1550 nm处进行的波导表征表明,在800℃真空退火1小时后,传输损耗从20 + 2 dB / cm显着提高到9±2 dB / cm。

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