首页> 外文会议>Conference on Silicon Photonics; 20080121-24; San Jose,CA(US) >A monolithic integrated low-threshold Raman silicon laser
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A monolithic integrated low-threshold Raman silicon laser

机译:单片集成低阈值拉曼硅激光器

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We present a monolithic integrated low-threshold Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide ring cavity with an integrated p-i-n diode. The laser cavity consists of a race-track shaped ring resonator connected to a straight bus waveguide via a directional coupler which couples both pump and signal light into and out of the cavity. Reverse biasing the diode with 25V reduces the free carrier lifetime to below 1 ns, and stable, single-mode, continuous-wave (CW) Raman lasing is achieved with threshold of 20mW, slope efficiency of 28%, and output power of 50mW. With zero bias voltage, a lasing threshold of 26mW and laser output power >10mW can be obtained. The laser emission has high spectral purity with a side-mode suppression of > 80dB and laser linewidth of < 100 kHz. The laser wavelength can be tuned continuously over 25 GHz. To demonstrate the performance capability of the laser for gas sensing application, we perform absorption spectroscopy on methane at 1687 nm using the CW output of the silicon Raman laser. The measured rotationally-resolved direct absorption IR spectrum agrees well with theoretical prediction. This ring laser architecture allows for on-chip integration with other silicon photonics components to provide an integrated and scaleable monolithic device. By proper design of the ring cavity and the directional coupler, it is possible to achieve higher order cascaded Raman lasing in silicon for extending laser wavelengths from near IR to mid IR regions.
机译:我们提出了一种基于集成绝缘体硅(SOI)肋状波导环形腔的单片集成低阈值拉曼硅激光器,具有集成的p-i-n二极管。激光腔由一个跑道形环形谐振腔组成,该环形谐振腔通过定向耦合器连接到直线总线波导,定向耦合器将泵浦和信号光耦合进出腔。以25V反向偏置二极管可将自由载流子寿命降低到1 ns以下,并以20mW的阈值,28%的斜率效率和50mW的输出功率实现稳定的单模连续波(CW)拉曼激射。在零偏置电压的情况下,可以获得26mW的激射阈值和大于10mW的激光输出功率。激光发射具有高光谱纯度,并具有> 80dB的侧模抑制和<100 kHz的激光线宽。激光波长可以在25 GHz范围内连续调谐。为了证明该激光器在气体传感应用中的性能,我们使用硅拉曼激光器的连续波输出在1687 nm处对甲烷进行吸收光谱分析。测得的旋转分辨直接吸收红外光谱与理论预测吻合良好。这种环形激光器架构允许与其他硅光子学组件进行片上集成,以提供集成且可缩放的单片器件。通过正确设计环形腔和定向耦合器,可以在硅中实现更高阶的级联拉曼激光,以将激光波长从近红外区域扩展到中红外区域。

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