Simulation of the euv-lithography projection system and nanometre features imaging

机译：euv光刻投影系统的仿真和纳米特征成像

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The illumination system presented in the paper consists of an elliptical mirror collecting light in the solid angle over 103 and two plane mirrors (one of them is a grazing incidence mirror). The projection lens consists of two 4th - order aspherical mirrors with the diminished obscuration 0.36. The simultaneous exposure wafer area is 0.82 x 0.82 mm~2 and NA=0.36. The obscuration of the projection lens and obscured aperture of the illumination system influence the contrast of nanometre features of image. Mathematical simulation of imaging by the partially coherent theory is performed for target bars with L&S 15, 30 and 45 nanometers. The results of computer simulation give the reliable values of contrast 0.50, 0.58 and 0.6 correspondingly.

机译：本文介绍的照明系统由一个椭圆镜和一个平面镜组成，该椭圆镜以103立体角收集光线，两个平面镜（其中一个是掠入射镜）。投影透镜由两个四阶非球面反射镜组成，其模糊度降低了0.36。同时曝光晶圆面积为0.82 x 0.82 mm〜2，NA = 0.36。投影透镜的遮挡和照明系统的孔遮挡会影响图像的纳米特征的对比度。对L＆S 15、30和45纳米的目标棒进行了部分相干理论的成像数学模拟。计算机仿真的结果分别给出了对比度0.50、0.58和0.6的可靠值。

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来源
《Conference on Superintense Light Fields and Ultrafast Processes; 20030630-20030704; St.Petersburg; RU》|2003年|P.136-144|共9页
会议地点 St. Petersburg(RU)
作者
Nikolay VOZNESENSKY; Alexander ZHEVLAKOV;
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作者单位

Institute of Fine Mechanics and Optics (IFMO) 14 Sablinskaya st, Saint-Petersburg, 197101, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
关键词
EUV-lithography; nanometre imaging; diffraction theory; partial coherence; computer simulation of optical images; computer-aided optical design;

机译：EUV光刻;纳米成像;衍射理论;部分相干;光学图像的计算机模拟;计算机辅助光学设计;

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Simulation of the euv-lithography projection system and nanometre features imaging

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