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首页> 外文会议>Conference on Ultrafast Phenomena in Semiconductors Ⅴ Jan 25-26, 2001, San Jose, USA >Phonon lifetimes and decay channels in single-crystalline bulk A1N
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Phonon lifetimes and decay channels in single-crystalline bulk A1N

机译：单晶块状AlN中的声子寿命和衰减通道

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摘要

We report on the Raman analysis of the phonon lifetimes and decay channels of the A_1(LO) and E_2(high) phonons of single-crystalline bulk A1N grown using the sublimation-recondensation method. The temperature dependence of the phonon lifetimes was investigated from 10K to 1275K. Lifetimes of the A_1(LO) phonon and the E_2(high) phonon of 0.75ps and 2.9ps, respectively, were measured at 10K. Our experimental results show that the A_1(LO) phonons of A1N decay primarily into two phonons of equal energy (Klemens' decay channel), most likely longitudinal-acoustic (LA) phonons. A1N is therefore in great contrast to GaN, where a symmetric decay of the A_1(LO) phonon is not possible due to a large energy gap between the acoustic and optical phonon branches. For the E_2(high) phonon, we find an asymmetric phonon decay. Contributions from two- and three-phonon decay channels were used for the modelling of the temperature dependence of the E_2(high) phonon lifetime. Phonon lifetimes and decay channels of the E_1(LO), A_1(TO) and E_1(TO) phonons of A1N were also investigated.
机译：我们报告了使用升华-再冷凝法生长的单晶本体A1N的A_1（LO）和E_2（高）声子的声子寿命和衰变通道的拉曼分析。研究了声子寿命的温度依赖性，从10K到1275K。在10K时测得的A_1（LO）声子和E_2（高）声子的寿命分别为0.75ps和2.9ps。我们的实验结果表明，A1N的A_1（LO）声子主要衰减为两个等能量的声子（Klemens衰减通道），最有可能是纵向声（LA）声子。因此，AlN与GaN形成了鲜明的对比，在GaN中，由于声子和光子声子分支之间的能隙较大，因此A_1（LO）声子不可能对称衰减。对于E_2（高）声子，我们发现了不对称声子衰变。来自两个和三个声子衰变通道的贡献用于建模E_2（高）声子寿命的温度依赖性。还研究了AlN的E_1（LO），A_1（TO）和E_1（TO）声子的声子寿命和衰减通道。

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