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首页> 外文会议>Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials; 20080120-23; San Jose,CA(US) >Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy
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Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

机译：亚皮秒时间分辨拉曼光谱研究InN中LO声子的动力学

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Time-resolved Raman spectroscopy on a subpicosecond time scale has been used to study the phonon dynamics of both the A_1(LO) and the E_1 (LO) phonons in InN. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of 5×10~(17)cm~(-3) to 0.25 ps, at the highest density of 2×10~(19)cm~(-3). Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.
机译：亚皮秒级的时间分辨拉曼光谱已用于研究InN中A_1（LO）和E_1（LO）声子的声子动力学。从其寿命的温度依赖性，我们证明两种声子都主要衰减成大波矢TO声子和大波矢TA / LA声子，与纤锌矿InN的声子色散关系一致。已发现它们的寿命从低电子空穴对密度5×10〜（17）cm〜（-3）时的2.2 ps降低到高密度2×10〜（19）cm时的0.25 ps的寿命。 〜（-3）。我们的实验结果表明，LO声子寿命的载流子密度依赖性是极性半导体中的普遍现象。

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