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首页> 外文会议>Conference on Vertical-Cavity Surface-Emitting Lasers VIII; 20040128-20040129; San Jose,CA; US >Characteristics of InGa(N)As VCSELs for fiber-optic applications
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Characteristics of InGa(N)As VCSELs for fiber-optic applications

机译：用于光纤的InGa（N）As VCSEL的特性

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摘要

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In_(0.36)Ga_(0.64)N_(0.006)As_(0.994)/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In_(0.35)Ga_(0.65)N_(0.02)As_(0.98)/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.
机译：我们报告了在1.3μm范围内用于光纤应用的InGaNAs / GaAs垂直腔面发射激光器（VCSEL）的结果。通过MBE或MOCVD在（100）GaAs衬底上生长外延结构。 InGaNAs / GaAs量子阱（QW）有源区的氮成分为0到0.02。对于MBE和MOCVD生长的VCSEL，实现了长波长（高达1.3μm）的室温连续波（RT CW）激光操作。对于具有n掺杂和p掺杂的分布式布拉格反射器（DBR）的MOCVD生长器件，对于In_（0.36）Ga_（0.64）N_（0.006）As_（0.994）/ GaAs VCSEL测得的最大光输出功率为0.74 mW。 MBE生长的器件具有腔内结构。在RT CW操作下已实现了具有1 mW输出功率的顶部发射多模1.3μmIn_（0.35）Ga_（0.65）N_（0.02）As_（0.98）/ GaAs VCSEL。测量并分析了InGaNAs / GaAs VCSEL的发射特性。

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