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首页> 外文会议>Conference on Vertical-Cavity Surface-Emitting Lasers VIII; 20040128-20040129; San Jose,CA; US >Long-wavelength InP-based VCSELs with Buried Tunnel Junction: Properties and Applications
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Long-wavelength InP-based VCSELs with Buried Tunnel Junction: Properties and Applications

机译：具有掩埋隧道结的长波长基于InP的VCSEL：特性和应用

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摘要

InP-based VCSELs (Vertical Cavity Surface Emitting Lasers) are interesting light sources for applications in spectroscopy and fiberoptical communication. Reviewed are devices with a buried tunnel junction (BTJ) and a dielectric backside reflector directly integrated on a electroplated gold-heatsink in the InGaAlAs/InP material system covering the wavelength range from 1.3 to 2.0 μm. The BTJ accomplishes both current confinement to the active region and wave-guiding by the refractive index distribution to achieve low threshold currents. Furthermore it allows for substitution of p-doped device parts by more suitable n-doped material. This approach already proved excellent device performance such as 7 mW output power (multi-mode) and good high temperature characteristics such as 0.5 mW at 80℃ for 1.55 μm. Modulation at 10 Gbit/s was also demonstrated. Since the BTJ VCSEL concept covers a wide wavelength range, there is a high-potential field of applications in Tunable Diode Laser Absorption Spectroscopy (TDLAS). Demonstrated are representative measurements of NH_3 and HC1. A specialty of TDLAS with VCSELs is the ability for rapid concentration determination with a time resolution up to the megahertz regime. Recent results and further developments of the device structure are also discussed.
机译：基于InP的VCSEL（垂直腔表面发射激光器）是用于光谱学和光纤通信的有趣光源。审查了具有掩埋隧道结（BTJ）和电介质背面反射器的器件，该器件直接集成在InGaAlAs / InP材料系统中的电镀金散热器上，波长范围从1.3到2.0μm。 BTJ既可以将电流限制在有源区，又可以通过折射率分布实现导波，以实现低阈值电流。此外，它允许用更合适的n型掺杂材料代替p型掺杂器件。这种方法已经证明了出色的器件性能，例如7 mW的输出功率（多模）和良好的高温特性，例如在80℃时1.55μm的0.5 mW。还演示了10 Gbit / s的调制。由于BTJ VCSEL概念涵盖了很宽的波长范围，因此可调谐二极管激光吸收光谱（TDLAS）领域具有很高的应用潜力。展示了NH_3和HCl的代表性测量值。带有VCSEL的TDLAS的特色是能够快速确定浓度，时间分辨率高达兆赫兹范围。还讨论了器件结构的最新结果和进一步发展。

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