Simulation of microwave power characteristics of AlGaN/AlN/GaN HEMT

机译：AlGaN / AlN / GaN HEMT的微波功率特性仿真

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A systematic AlGaN/AlN/GaN HEMT physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The effects of source field plate on AlGaN/AlN/GaN HEMT breakdown voltage and DC drain current is also studied based on the established model. The off-state breakdown voltage was significantly improved by employing a source field plate. This is because the source field plate redistributes the electric fields in the gate-to-drain region.

机译：建立了系统的基于AlGaN / AlN / GaN HEMT的物理数值模型。该模型包括与场有关的迁移率，极化效应，界面态，表面态和陷阱。该模型已在TCAD Silvaco中实现。模拟的直流和射频特性很好地拟合了测量结果。在建立模型的基础上，研究了源极场板对AlGaN / AlN / GaN HEMT击穿电压和直流漏极电流的影响。通过使用源极场板，可以大大提高截止状态的击穿电压。这是因为源极场板会在栅极到漏极区域重新分布电场。

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来源
《Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on》|2012年|p.564- 566|共3页
会议地点 Three Gorges(CN)
作者
Fu Wenli;
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作者单位

Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 P.R. China;

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原文格式 PDF
正文语种 eng
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1. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [J] . Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Electron Devices Society, IEE . 2017,第3期

机译：通过低频S参数测量和基于TCAD的物理设备仿真识别微波功率AlGaN / GaN HEMT中的GaN缓冲阱
2. Optimization of the Parameters of HEMT GaN/AlN/AlGaN Heterostructures for Microwave Transistors Using Numerical Simulation [J] . Tikhomirov V. G., Zemlyakov V. E., Volkov V. V., Semiconductors . 2016,第2期

机译：基于数值模拟的微波晶体管HEMT GaN / AlN / AlGaN异质结构参数优化
3. Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices [J] . A. Mohanbabu, N. Anbuselvan, N. Mohankumar, Solid-State Electronics . 2014,第jana期

机译：基于间隔器的AlGaN / AlN / GaN HEMT器件中薄层载流子密度和微波频率特性的建模
4. Simulation of microwave power characteristics of AlGaN/AlN/GaN HEMT [C] . Fu Wenli International Conference on Consumer Electronics, Communications and Networks . 2012

机译：AlGaN / ALN / GAN HEMT微波功率特性的仿真
5. Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs [D] . Tan, Jeffrey Lee. 2017

机译：使用AlGaN / GaN HEMT的大功率，宽带微波F类功率放大器的设计
6. Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [O] . Pedro J. Martínez, Enrique Maset, Pedro Martín-Holgado, 2019

机译：γ辐射对AlGaN / GaN功率HEMT中动态RDSON特性的影响
7. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [O] . Subramani, Nandha Kumar, Couvidat, Julien, Hajjar, Ahmad Al, 2017

机译：通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱
8. Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs [R] . Freeman, Jon C. 2004

机译：高功率，高效率sspas中siC和蓝宝石mmIC上微波alGaN / GaN HEmT的沟道温度模型

Simulation of microwave power characteristics of AlGaN/AlN/GaN HEMT

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