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首页> 外文会议>COST(Co-Operating in Science and Technology) 525 Meeting Oct, 2001 Aveiro, Portugal >Modulation of Electrical Conductivity Through Microstructural Development in W-Doped BIT Ceramics
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Modulation of Electrical Conductivity Through Microstructural Development in W-Doped BIT Ceramics

机译：掺W BIT陶瓷通过微结构发展对电导率的调节

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摘要

High temperature piezoelectric ceramics Bi_4Ti_3O_(12) doped with 5 at.% WO_3 (BIT-W) were prepared by using different doping routes. Ceramic powders of undoped BIT were prepared by a chemical coprecipitation method. The doping route used modified the sintering behaviour and lattice constants of BIT and different microstructures were achieved. Dielectric properties and ac electrical conductivity of the different BIT-based ceramics were studied. An exponential relation between the ac electrical conductivity and the aspect ratio (l/t) of the plate-like grains was observed in undoped and W~(6+) doped piezoelectric ceramics.
机译：通过使用不同的掺杂途径，制备了掺杂有5at。％WO_3（BIT-W）的高温压电陶瓷Bi_4Ti_3O_（12）。通过化学共沉淀法制备未掺杂的BIT陶瓷粉。所使用的掺杂途径改变了BIT的烧结行为和晶格常数，并获得了不同的微观结构。研究了不同BIT基陶瓷的介电性能和交流电导率。在未掺杂和W〜（6+）掺杂的压电陶瓷中，观察到交流电导率与板状晶粒的长径比（l / t）之间呈指数关系。

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