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Line Width Roughness Effects on Device Performance: The Role of the Gate Width Design

机译:线宽粗糙度对器件性能的影响:栅极宽度设计的作用

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摘要

The role of the gate width in the effects of Line Width Roughness (LWR) on transistor performance is investigated. Two mathematical results regarding the statistical nature of LWR are presented and discussed. The implications of these results on the effects of LWR on transistor performance are investigated through a 2D modeling approach. It is found that, for fixed LWR induced by manufacturing processes, transistors designed with large gate widths seem to mitigate the degradation effects of LWR on transistor performance.
机译:研究了栅极宽度在线宽粗糙度(LWR)对晶体管性能的影响中的作用。提出并讨论了有关轻水堆统计性质的两个数学结果。通过2D建模方法研究了这些结果对LWR对晶体管性能的影响。已经发现,对于由制造工艺引起的固定的LWR,设计有大栅极宽度的晶体管似乎减轻了LWR对晶体管性能的劣化影响。

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