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首页> 外文会议>Design and Process Integration for Microelectronic Manufacturing IV >Self-Compensating Design for Reduction of Timing and Leakage Sensitivity to Systematic Pattern Dependent Variation
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Self-Compensating Design for Reduction of Timing and Leakage Sensitivity to Systematic Pattern Dependent Variation

机译：自补偿设计可减少对系统模式相关变化的时序和泄漏敏感性

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摘要

Focus is one of the major sources of linewidth variation. CD variation caused by defocus is largely systematic after the layout is finished. In particular, dense lines "smile" through focus while isolated lines "frown" in typical Bossung plots. This well-defined systematic behavior of focus-dependent CD variation allows us to develop a self-compensating design methodology. In this work, we propose a novel design methodology that allows explicit compensation of focus-dependent CD variation, either within a cell (self-compensated cells) or across cells in a critical path (self-compensated design). By creating iso and dense variants for each library cell, we can achieve designs that are more robust to focus variation. Optimization with a mixture of iso and dense cell variants is possible both for area and leakage power, with the latter providing an interesting complement to existing leakage reduction techniques such as dual-Vth. We implement both heuristic and Mixed-Integer Linear Programming (MILP) solution methods to address this optimization, and experimentally compare their results. Our results indicate that designing with a self-compensated cell library incurs ～12% area penalty and ～6% leakage increase over original layouts while compensating for focus-dependent CD variation (i.e., the design meets timing constraints across a large range of focus variation). We observe ～27% area penalty and ～7% leakage increase at the worst-case defocus condition using only single-pitch cells. The area penalty of circuits after using either the heuristic or MILP optimization approach is reduced to ～3% while maintaining timing. We also apply our optimizations to leakage, which traditionally shows very large variability due to its exponential relationship with gate CD. We conclude that a mixed iso/dense library combined with a sensitivity-based optimization approach yields much better area/timing/leakage tradeoffs than using a self-compensated cell library alone. Self-compensated design shows an average of 25% leakage reduction at the worst defocus condition for the benchmark designs that we have studied.
机译：焦点是线宽变化的主要来源之一。布局完成后，由散焦引起的CD变化在很大程度上是系统的。特别是，在典型的Bossung情节中，密集线通过焦点“微笑”，而孤立线“皱着眉”。焦点相关CD变体的这种明确定义的系统行为，使我们能够开发一种自补偿设计方法。在这项工作中，我们提出了一种新颖的设计方法，该方法可以显着补偿依赖于焦点的CD变化，既可以在一个单元内（自补偿单元），也可以在关键路径上跨整个单元（自补偿设计）。通过为每个库单元创建同等和密集变体，我们可以获得对聚焦变体更为鲁棒的设计。对于面积和泄漏功率，均可以使用iso和致密单元变体的混合物进行优化，而后者则是对现有泄漏减少技术（例如Dual-Vth）的有趣补充。我们同时实现了启发式和混合整数线性规划（MILP）解决方案方法来解决此优化问题，并通过实验比较了它们的结果。我们的结果表明，使用自补偿单元库进行设计时，与原始版图相比，面积损失增加了约12％，泄漏增加了6％，同时补偿了与焦点有关的CD变化（即，设计在大范围的焦点变化中都满足了时序约束） ）。我们观察到，在最坏情况下，仅使用单个间距的电池，在散焦条件下，面积损失约27％，泄漏增加约7％。使用启发式或MILP优化方法后，电路的面积损失可降低至〜3％，同时保持时序。我们还将优化应用于泄漏，由于泄漏与栅极CD呈指数关系，传统上显示出很大的可变性。我们得出的结论是，混合的iso /密集库与基于灵敏度的优化方法相结合，比单独使用自补偿细胞库产生了更好的面积/时序/泄漏折衷。对于我们研究的基准设计，自补偿设计在最坏的散焦条件下显示出平均减少25％的泄漏。

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