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RET for the Wiring Layer of A 3-D Memory

机译：RET，用于3-D存储器的布线层

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A typical wiring layer of SanDisk 3-dimensional memory device includes a dense array of lines. Every other line terminates in an enlarged contact pad at the edge of the array. The pitch of the pads is twice the pitch of the dense array. When process conditions are optimized for the dense array, the gap between the pads becomes a weak point. The gap has a smaller depth of focus. As defocus increases, the space between the pads diminishes and bridges. We present a method of significantly increasing the depth of focus of the pads at the end of the dense array. By placing sub-resolution cutouts in the pads, we equalize the dominant pitch of the pads and the dense array.
机译：SanDisk 3维存储设备的典型接线层包括密集的线阵列。每隔一条线终止于阵列边缘处扩大的接触垫。焊盘的间距是密集阵列的间距的两倍。当针对密集阵列优化工艺条件时，焊盘之间的间隙将成为薄弱点。间隙的焦点深度较小。随着散焦的增加，焊盘之间的空间会减小并桥接。我们提出了一种显着增加密集阵列末端的焊盘聚焦深度的方法。通过在焊盘中放置亚分辨率切口，我们可以使焊盘的主导间距和密集阵列相等。

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