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首页> 外文会议>Design and Process Integration for Microelectronic Manufacturing IV >Across Field CD Control Improvement for Critical Level Imaging: New Applications for Layout Correction and Optimization
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Across Field CD Control Improvement for Critical Level Imaging: New Applications for Layout Correction and Optimization

机译：用于临界水平成像的跨域CD控制改进：布局校正和优化的新应用

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As minimum groundrules for chipmanufacturing continue to shrink the lithography process is pushed further and further into the low k_1 domain. One of the key characteristics of low k_1 lithography is the fact that process variations are increasingly more difficult to manage and the resulting CD variations are significant relative to the nominal dimensions. As a result it is quite common for process engineers to define process budgets, mostly dose and focus budgets. These budgets summarize the effects of various exposure and process contributors and provide the range within which the process is expected to fluctuate. An important task of process design is to ensure that within these budgets no catastrophic patterning failures occur, but even more importantly that the CD variations remain within the allowed design tolerances. Various techniques have been developed to reduce the sensitivity of the lithography process to process variations, among those one of the more prominent and quite widely adopted techniques are subresolution enhancements. Traditionally subresolution assist features are placed in the design using rules based approaches. This work presents a model based approach to assist feature placement. In this approach assist features are placed such that the resulting mask exhibits the minimum sensitivity to the specific process variations encountered. The type of process variation may be defined by the user as serious of worst case conditions, for example in dose and focus. The technique however is general enough to allow a variety of process variations to be included. This work focuses on demonstrating the key concept and show it's validity. The approach demonstrated in this work is fully integrated with the process budget concept and therefore allows a "process aware" mask optimization.
机译：随着用于芯片制造的最小原则继续缩小，光刻工艺被进一步推向低k_1域。低k_1光刻的关键特征之一是以下事实：工艺变化越来越难以管理，并且所产生的CD变化相对于标称尺寸也很重要。结果，过程工程师通常会定义过程预算，主要是剂量和重点预算。这些预算总结了各种暴露和过程贡献者的影响，并提供了预期过程波动的范围。工艺设计的一项重要任务是确保在这些预算之内不会发生灾难性的图案故障，但更重要的是，确保CD的变化保持在允许的设计公差内。为了降低光刻工艺对工艺变化的敏感性，已经开发了各种技术，其中最突出且被广泛采用的技术之一是子分辨率增强。传统上，使用基于规则的方法将次分辨率辅助功能放置在设计中。这项工作提出了一种基于模型的方法来辅助特征放置。在这种方法中，放置辅助部件，以使所得的掩模对遇到的特定工艺变化表现出最小的敏感性。用户可以将过程变化的类型定义为严重的最坏情况，例如在剂量和焦点方面。然而，该技术足够通用以允许包括各种工艺变化。这项工作着重于演示关键概念并证明其有效性。这项工作中演示的方法与过程预算概念完全集成在一起，因此可以实现“过程感知”掩模优化。

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