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首页> 外文会议>Dielectrics for nanosystems 5: materials science, processing, reliability, and manufacturing -and- tutorials in nanotechnology: more than moore - beyond CMOS emerging materials and devices. >Low-temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition
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Low-temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition

机译：汽液化学气相沉积法低温生长Ge纳米线

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摘要

This paper reports the growth of the germanium nanowires (Ge NWs) with a single-step temperature method via vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 300, 280 and 260℃. The Ge NWs grown at 300℃ tend to have a tapered structure and the sidewalls of the nanowires were observed to be decorated with gold. The tapering was caused by the uncatalysed deposition of Ge via CVD mechanism at the sidewalls of the nanowires and significantly minimised at 260℃ which leads to the formation of straight and ultra-thin Ge NWs. The sidewalls of the Ge NWs grown at 260℃ were also observed not to be decorated with gold. The Ge NWs grown from 0.1-nm-thick Au at 260℃ had diameter as small as ～3 nm which offers an opportunity to fabricate high-performance p-type ballistic Ge NW transistor and to realise nanowire solar cell with higher efficiency.
机译：本文通过蒸气-液-固（VLS）机理，在300、280和260℃的低压化学气相沉积（CVD）反应器中，采用单步温度方法报告了锗纳米线（Ge NWs）的生长。在300℃下生长的Ge NWs倾向于具有锥形结构，并且观察到纳米线的侧壁被金装饰。逐渐变细是由于通过纳米线侧壁上的CVD机理未催化沉积Ge引起的，并且在260℃时显着最小化，从而形成了直的和超薄的Ge NW。还观察到在260℃下生长的Ge NW的侧壁没有用金装饰。在260℃时从0.1nm厚的金生长的Ge NW的直径小至约3 nm，这为制造高性能p型弹道Ge NW晶体管和实现更高效率的纳米线太阳能电池提供了机会。

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