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Efficient Readout for Carbon Nanotube (CNT)-based IR Detectors

机译:基于碳纳米管(CNT)的红外探测器的高效读数

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By forming a Schottky barrier with the contact metal, a semiconducting CNT based Schottky photodiode is formed at the CNT-metal contact. The photogenerated electron-hole pairs within the depletion region of the Schottky barrier are separated by an external electrical field or the built-in field, producing a photocurrent. How to efficiently read this photocurrent signal out is an essential problem for the photodetectors. Since a semiconducting CNT normally forms a Schottky barrier at each CNT-electrode contact, two Schottky photodiodes are reversely connected and their photocurrents will cancel each other, which makes it difficult to measure the overall photocurrent. With different materials as the contact electrodes, the asymmetric structure enlarged the difference between the two CNT-metal contacts. Hence the measurable photocurrent is also enlarged. Furthermore, since the CNT Schottky barrier is determined by the metal work function and the Fermi level of the CNT, the Schottky barrier is able to be adjusted by controlling the Fermi level of the CNT with a gate electrode. In this way, the photocurrent can be optimized to a maximum value by varying the gate voltage. CNT based infrared detectors with different structures were fabricated and tested. Experimental results showed that the asymmetric structure and the gate controlled CNT based photodiode could significantly improve the performance of CNT based infrared detectors.
机译:通过用接触金属形成肖特基势垒,在CNT-金属接触处形成了一个基于CNT的半导体肖特基光电二极管。肖特基势垒的耗尽区内的光生电子-空穴对被外部电场或内建电场隔开,产生光电流。对于光电探测器,如何有效地读出该光电流信号是一个基本问题。由于半导体CNT通常在每个CNT电极触点处形成肖特基势垒,因此两个肖特基光电二极管反向连接,并且它们的光电流会相互抵消,这使得很难测量整个光电流。使用不同的材料作为接触电极,不对称结构扩大了两个CNT金属触点之间的差异。因此,可测量的光电流也增大了。此外,由于CNT肖特基势垒由金属功函数和CNT的费米能级决定,因此能够通过利用栅极电极控制CNT的费米能级来调整肖特基势垒。以这种方式,可以通过改变栅极电压将光电流优化到最大值。制造并测试了具有不同结构的基于CNT的红外探测器。实验结果表明,非对称结构和基于栅极控制的基于CNT的光电二极管可以显着提高基于CNT的红外探测器的性能。

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