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首页> 外文会议>Electrochemical Society(ECS) Meeting;Symposium on Light Alloys 3; 20071007-12;20071007-12; Washington,DC(US);Washington,DC(US) >Growth of Anodic Aluminum Oxide Films Without pH-Buffer
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Growth of Anodic Aluminum Oxide Films Without pH-Buffer

机译：没有pH缓冲液的阳极氧化铝膜的生长

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摘要

The anodic behavior of abraded pure Al in un-buffered solutions was previously addressed using the cyclic voltammetry and the numerical modeling. In buffer solutions such as borate and phosphate, the Al oxidation current increased rapidly at first and then reached a plateau region, and was analyzed in terms of the high field conduction model and oxide dissolution. However, the anodic current in un-buffered solutions such as sulfate continued to increase with potential. Introducing additional contributions to the earlier model by assuming that the oxide formation efficiency is diminishing with the degree of surface acidity, the features of the anodic behavior in un-buffered solutions, absent in buffered solutions, were simulated.
机译：以前使用循环伏安法和数值模型解决了纯铝在无缓冲溶液中的阳极行为。在硼酸盐和磷酸盐等缓冲溶液中，Al的氧化电流首先迅速增加，然后达到一个平稳区域，并根据高场传导模型和氧化物溶解进行了分析。但是，非缓冲溶液（例如硫酸盐）中的阳极电流会随着电势的增加而持续增加。通过假定氧化物的形成效率随着表面酸度的降低而向早期模型中引入其他贡献，模拟了非缓冲溶液中不存在的阳极行为的特征。

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