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首页> 外文会议>Electrochemical Society(ECS) Meeting;Symposium on Electrochemical Processing in ULSI and MEMS; 20070506-10;20070508-09; Chicago,IL(US);Chicago,IL(US) >Transient Overgrowth of a Resistive Barrier Layer by Electrodeposited Metal In the Presence nf Additives
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Transient Overgrowth of a Resistive Barrier Layer by Electrodeposited Metal In the Presence nf Additives

机译：存在nf添加剂时电沉积金属对电阻阻挡层的过渡过度生长

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摘要

In this paper, a novel, high throughput experimental and theoretical technique was developed to extract additive influences on the dual-kinetic deposition of a metal onto a foreign substrate based on key transition points in chronopotentiometry curves. A finite difference (FD) 1-D growth mode simulation was developed to predict the overgrowth of an electrodeposited metal onto a resistive substrate in the presence of additives based on the experimental results. The simulations were employed to study thin film overgrowth on the wafer scale. Results indicated that the deposit profile was more uniform over a broader range of deposition rates as the rate on the coalesced deposit (ξ_(Cu)) decreased. Other key parameters for promoting thin film growth included a low coalescence thickness, high substrate conductivity, and an intermediate applied current.
机译：在本文中，开发了一种新颖的高通量实验和理论技术，用于根据计时电位曲线中的关键跃迁点，提取对金属在异质衬底上的双动力学沉积的附加影响。基于实验结果，开发了一种有限差分（FD）一维生长模式模拟来预测在添加剂存在下电沉积金属在电阻性基材上的过度生长。该模拟被用于研究晶片规模上的薄膜过度生长。结果表明，随着聚结沉积物（ξ_（Cu））上的沉积率降低，沉积物分布在较宽的沉积速率范围内更加均匀。促进薄膜生长的其他关键参数包括低聚结厚度，高基板电导率和中间施加的电流。

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