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首页> 外文会议>European Conference on Wireless Technology; 20031008-20031010; Munich; DE >A 51.8 GHz VCO With Low Phase Noise Implemented in SiGe BiCMOS Technology
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A 51.8 GHz VCO With Low Phase Noise Implemented in SiGe BiCMOS Technology

机译：采用SiGe BiCMOS技术实现的具有低相位噪声的51.8 GHz VCO

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摘要

A fully integrated 51.8 GHz millimeter wave LC VCO with -106.6 dBc/Hz phase noise at 600 kHz offset frequency and 0.93 GHz tuning range is reported in the paper using IBM BiCMOS-6HP technology. The output voltage swing of the VCO is about 0.4 Vp-p for the complementary cross-coupled topology with the buffer. A bipolar device is used as the tail transistor to supply constant a current to preserve the oscillation of the VCO. The parasitics due to interconnect metals are extracted from the layouts, the effects of those parasitics on the VCO's performance are investigated. Based on the analyses, the optimized layout of the complementary VCO is obtained, the pre-layout and the post-layout simulations are compared and presented in this paper.
机译：本文使用IBM BiCMOS-6HP技术报告了完全集成的51.8 GHz毫米波LC VCO，在600 kHz偏移频率和0.93 GHz调谐范围下具有-106.6 dBc / Hz的相位噪声。对于具有缓冲器的互补交叉耦合拓扑，VCO的输出电压摆幅约为0.4 Vp-p。双极型器件用作尾晶体管，以提供恒定电流以保持VCO的振荡。从布线中提取了由于互连金属引起的寄生效应，研究了这些寄生效应对VCO性能的影响。在分析的基础上，获得了互补VCO的优化布局，比较了前布局和后布局仿真。

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