• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >GROWTH AND OPTICAL PROPERTIES OF Cu(In,Ga)Se_2 THIN FILMS ON FLEXIBLE METALLIC FOILS
【24h】

GROWTH AND OPTICAL PROPERTIES OF Cu(In,Ga)Se_2 THIN FILMS ON FLEXIBLE METALLIC FOILS

机译：柔性金属箔上Cu（In，Ga）Se_2薄膜的生长和光学性能

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Polycrystalline Cu(In,Ga)Se_2 (CIGS) thin films on flexible metallic foils were prepared by a two-stage selenization of sequentially deposited Cu, Ga and In precursors. The selenization procedure was carried at various recrystallization temperatures (T_s) ranging from 230 to 520 ℃. The phases, surface morphologies, microstructures and elemental depth profiles of the CIGS films prepared on different metallic flexible foils (titanium, molybdenum, aluminum, stainless steel) were analysed. To characterize the structure quality and intrinsic defect nature low-temperature (4.2 - 300 K) photoluminescence (PL), photoluminescence excitation (PLE) and optical transmission measurements were performed. Experiments shows that the structural and optical properties of CIGS absorber layers strongly depend on the growth condition, type of substrate and chemical composition. The band gap energy (Eg) of CIGS chalcopyrite compounds, grown on nontransparent flexible metallic substrates was estimated from PLE data. Excitation power and temperature dependent PL measurements shows that the broad bands in the near-band edge spectral region are caused by the band-tail recombination.
机译：柔性金属箔上的多晶Cu（In，Ga）Se_2（CIGS）薄膜是通过两步硒化依次沉积的Cu，Ga和In前驱体制备的。硒化过程在230至520℃的不同重结晶温度（T_s）下进行。分析了在不同的金属柔性箔（钛，钼，铝，不锈钢）上制备的CIGS膜的相，表面形貌，微观结构和元素深度分布。为了表征结构质量和固有缺陷性质，进行了低温（4.2-300 K）低温光致发光（PL），光致发光激发（PLE）和光透射率测量。实验表明，CIGS吸收层的结构和光学性能在很大程度上取决于生长条件，基底类型和化学成分。从PLE数据估计了在不透明的柔性金属基材上生长的CIGS黄铜矿化合物的带隙能（Eg）。激发功率和温度相关的PL测量表明，近带边缘光谱区域中的宽带是由带尾重组引起的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号