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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >ELECTRODEPOSITION OF COPPER INDIUM GALLIUM SULPHUR SELENIDE THIN FILMS USING A TWO-ELECTRODE SYSTEM FOR APPLICATIONS IN SOLAR CELLS
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ELECTRODEPOSITION OF COPPER INDIUM GALLIUM SULPHUR SELENIDE THIN FILMS USING A TWO-ELECTRODE SYSTEM FOR APPLICATIONS IN SOLAR CELLS

机译：利用两电极系统电沉积铜铟镓硒薄膜的研究

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摘要

Thin layers of copper indium gallium sulphur selenide (CuInGaSSe) have been electrodeposited on glass/conducting glass substrates using a simplified two-electrode system. Photoelectrochemical (PEC) cell tests and X-ray fluorescence (XRF) measurements have been used to determine the electrical conductivity type and the composition of the layers respectively. These investigations confirm that it is possible to grow CuInGaSSe layers with p-, i- and n-type electrical conduction, as pre-determined for applications in multi-layer device structures. XRF and PEC measurements show that Cu-richness provides p-type conduction and In-richness provides n-type conduction in electrodeposited CuInGaSSe layers. Optical absorption has been used to estimate the energy bandgap of electrodeposited layers. It has been shown that it is possible to grow materials with different bandgaps in the range 0.90-1.80 eV. The combination of the two properties namely the electrical conductivity type and the bandgap variation allows growth of multi-layer graded bandgap structures. The preliminary work on 2-layer solar cell structures show adequate rectifying properties and photovoltaic activity. These new results are presented in this paper.
机译：铜铟镓硫硒化物（CuInGaSSe）的薄层已使用简化的两电极系统电沉积在玻璃/导电玻璃基板上。光电（PEC）电池测试和X射线荧光（XRF）测量已分别用于确定电导率类型和层的组成。这些研究证实，如在多层器件结构中的应用所预先确定的那样，可以生长具有p型，i型和n型导电性的CuInGaSSe层。 XRF和PEC测量表明，在电沉积的CuInGaSSe层中，富Cu提供p型导电，富In提供n型导电。光吸收已被用于估计电沉积层的能带隙。已经表明可以生长具有0.90-1.80eV范围内的不同带隙的材料。电导率类型和带隙变化这两个特性的组合允许多层渐变带隙结构的生长。 2层太阳能电池结构的初步工作显示出足够的整流性能和光伏活性。这些新结果将在本文中介绍。

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