首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >ROLE OF OXYGEN AND SULPHUR IN ENHANCING N AND P-TYPES CONDUCTIVITIES OF CuInS_2 THIN FILMS
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ROLE OF OXYGEN AND SULPHUR IN ENHANCING N AND P-TYPES CONDUCTIVITIES OF CuInS_2 THIN FILMS

机译:氧和硫在增强CuInS_2薄膜的N和P型电导率中的作用

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Post-growth treatments in air and sulfur atmospheres were performed on CuInS_2 films prepared by the single-source thermal evaporation method. They effects on the structural, optical and electrical properties of the films was studied by means of X-ray diffraction (XRD), optical reflection and transmission and resistance measurement respectively. Heating under air atmosphere from 100 to 350℃ after evaporation, the stability of the observed N-type conductivity after annealing depends strongly with the annealing temperature. Indeed it was shown that for the annealing temperature above 200℃ the N-type conductivity is stable. The resistivity of the N-CuInS_2 thin films correlated well with the corresponding annealing temperature. The samples after annealing have direct bandgap energies of 1.45-1.50 eV. By annealing in sulphur atmosphere for suitable duration, the as-made films were converted in stable P-type conductivity. The structural modifications of the films are accompanied by changes in the energy band gaps. The dark resistivity after sulfurization decreases from ≈ 600 to ≈ 4.10~(-3) Ω cm and strongly depends with the annealing temperature and the sulfurization duration.
机译:在空气和硫气氛中对通过单源热蒸发法制备的CuInS_2膜进行了后生长处理。分别通过X射线衍射(XRD),光学反射,透射和电阻测量研究了它们对薄膜结构,光学和电学性质的影响。蒸发后在空气中加热100至350℃,退火后观察到的N型电导率的稳定性与退火温度密切相关。确实表明,对于高于200℃的退火温度,N型电导率是稳定的。 N-CuInS_2薄膜的电阻率与相应的退火温度密切相关。退火后的样品具有1.45-1.50 eV的直接带隙能。通过在硫气氛中退火适当的时间,将制成的膜转变成稳定的P型电导率。膜的结构改变伴随着能带隙的变化。硫化后的暗电阻率从≈600降低到≈4.10〜(-3)Ωcm,并与退火温度和硫化持续时间密切相关。

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