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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >CIS ABSORBER LAYER BY NON-VACUUM DEPOSITION AND SELENIZATION OF LOW COST PRECURSORS
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CIS ABSORBER LAYER BY NON-VACUUM DEPOSITION AND SELENIZATION OF LOW COST PRECURSORS

机译：非真空沉积和低成本前体简化的CIS吸收层

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摘要

CuInSe_2 (CIS) absorber layer was formed by depositing low cost precursors on Mo/glass substrate by the doctor blade technique and then by subsequent selenizaton of the precursor layer. Precursor solution was prepared by dissolving Cu(NO)_3 and InCl in methanol with appropriate atomic ratio. The solution was then deposited onto the Mo/glass substrate, resulting in a green layer with CuCl crystals formed during the evaporation of methanol. Subsequently, the sample was selenized in a two-zone RTP (Rapid Thermal Process) furnace to convert the green layer to ternary CIS compound by which CIS layer was formed, confirmed by the X-ray diffraction data.
机译：通过用刮刀技术在Mo /玻璃基板上沉积低成本的前驱物，然后通过随后的前驱物层的硒化来形成CuInSe_2（CIS）吸收剂层。通过将Cu（NO）_3和InCl以适当的原子比溶解在甲醇中来制备前体溶液。然后将溶液沉积在Mo /玻璃基板上，形成在甲醇蒸发过程中形成CuCl晶体的绿色层。随后，通过X射线衍射数据证实，将样品在两区RTP（快速热处理）炉中硒化，以将生坯层转化为形成CIS层的三元CIS化合物。

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