NANO -CRYSTALLINE SILICON P-LAYER IN A-SI:H BASED P-I-N SOLAR CELLS

机译：基于A-SI：H的P-I-N太阳能电池中的纳米晶体硅P层

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The impacts of p-layer bandgap E_p on the V_(oc) of a-Si:H solar cells were investigated by experiments and numerical simulations using AMPS model developed at Perm State University. Using a high hydrogen dilution and a high gas pressure, as well as a high RF power density of at a low substrate temperature of 70℃, we got nanocrystalline silicon (nc-Si:H) p-layers with wide bandgap up to 1.9 eV . It is found that the nc-Si:H p-layer with a certain nanocrystalline volume fraction, within the range studied, leads to a higher Voc.

机译：通过实验和使用彼尔姆州立大学开发的AMPS模型进行数值模拟，研究了p层带隙E_p对a-Si：H太阳能电池V_（oc）的影响。利用高氢气稀释度和高气压，以及在70℃的低基板温度下的高RF功率密度，我们获得了带隙高达1.9 eV的纳米晶硅（nc-Si：H）p层。发现在所研究的范围内具有一定纳米晶体体积分数的nc-Si：H p层导致更高的Voc。

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来源
《European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE)》|2006年|P.1655-1657|共3页
会议地点 Dresden(DE)
作者
X.B. Zeng; X.B. Liao; X.J.Ye; H.Y. Hao; H.W. Diao; Y. Xu.X. Xiang; G. Kong; H. Li; M. Chen; J.Xu;
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作者单位

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

Shanghai Institute of Space Power Sources, No.388 Cangwu Road, Shanghai. 200233;

Shanghai Solar Energy ST Co. Ltd, No.555 ShenNan Road, Shanghai, China, 201108;

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会议组织
原文格式 PDF
正文语种 eng
中图分类太阳能技术;
关键词
a-Si; simulation; nanocrystalline;

机译：非晶硅;模拟;纳米晶;

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专利

1. Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes [J] . Vygranenko Y., Fathi E., Sazonov A., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2010,第11期

机译：用于a-Si：H p-i-n太阳能电池和光电二极管的纳米晶p层
2. The recorded open-circuit voltage and fill factor achievement of a-Si:H p-i-n/HIT-type tandem solar cells by tuning up the crystalline in tunneling recombination junction layer [J] . Kim Sangho, Vinh Ai Dao, Thanh Thuy Trinh, Semiconductor science and technology . 2019,第6期

机译：通过调整隧穿复合结中的晶体，记录a-Si：H p-i-n / HIT型串联太阳能电池的开路电压和填充因子
3. The recorded open-circuit voltage and fill factor achievement of a-Si:H p-i-n/HIT-type tandem solar cells by tuning up the crystalline in tunneling recombination junction layer [J] . Kim Sangho, Vinh Ai Dao, Thanh Thuy Trinh, Semiconductor science and technology . 2019,第6期

机译：通过调节隧道重组结层中的结晶，记录的开路电压和A-Si：H P-I-N / HIT型串联太阳能电池的填充因子实现
4. NANO -CRYSTALLINE SILICON P-LAYER IN A-SI:H BASED P-I-N SOLAR CELLS [C] . X.B. Zeng, X.B. Liao, X.J.Ye, European Photovoltaic Solar Energy Conference . 2006

机译：A-Si的纳米晶体硅P-层：H基于P-I-N太阳能电池
5. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration [D] . Huang, Zhiquan 2016

机译：薄膜A-Si的光谱椭圆形研究：H / NC-Si：H MicroMorph太阳能电池制造在P-I-N超级型配置
6. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells [O] . Fang-Hsing Wang, Hsin-Hui Kuo, Cheng-Fu Yang, 2014

机译：SiNx阻挡层对聚酰亚胺Ga2O3掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
7. Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes [O] . Vygranenko Yuri, Fathi E., Sazonov A., 2010

机译：用于a-Si：H p-i-n太阳能电池和光电二极管的纳米晶p层
8. Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell [R] . Naseem, H. A., Brown, W. D., Ang, S. S. 1993

机译：基于a-si：H的p-i-n太阳能电池中staebler-Wronski降解效应的研究

NANO -CRYSTALLINE SILICON P-LAYER IN A-SI:H BASED P-I-N SOLAR CELLS

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