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首页> 外文会议>Ferroelectric Thin Films XII >Low Temperature Crystallization of Bismuth Layer-Structured Ferroelectric Thin Films Using Lead Titanate Sol-Gel Templating Technique and Their Electrical Properties
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Low Temperature Crystallization of Bismuth Layer-Structured Ferroelectric Thin Films Using Lead Titanate Sol-Gel Templating Technique and Their Electrical Properties

机译：钛酸铅溶胶-凝胶模板技术对铋层结构铁电薄膜的低温结晶及其电学性能

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摘要

The crystal structure and electrical properties of lead titanate (PbTiO_3: PT) sol-gel network templated bismuth layer-structured ferroelectric (BLSF) thin films were systematically investigated as a function of the doping amount of lead titanate sol-gel solution and annealing temperature. The starting solutions of lead titanate sol-gel templated BLSF were prepared by adding lead titanate sol-gel solution to BLSF solutions such as strontium bismuth tantalate (SrBi_2Ta_2O_9: SBT), bismuth titanate (Bi_4Ti_3O_(12): BiT) and lanthanum-doped bismuth titanate ((Bi,La)_4Ti_3O_(12): BLT). These solutions were spin-coated on platinized silicon wafers and pyrolized on a hot plate, then crystallized at 550℃ ― 738℃ by RTA (Rapid Thermal Annealing). The crystallized films with sputtered platinum top electrodes were post-annealed for electrical property measurements. In the case of SBT-PT, it was found that the added lead titanate so-gel network has no remarkable effect on lowering the BLSF (m=2) crystallization temperature but rather enhances the pyrochlore phase. In the case of BiT-PT, the bismuth layered-structure was confirmed at the temperature down to 550℃ as the amount of lead titanate sol-gel network is increased. The major layered-structure, however, was not desired m=3, but unexpected m (e.g m=4 or higher). In the case of BLT-PT, lowering the BLSF (m=3) crystallization temperature down to 638℃ was finally achieved within proper amount of lead titanate sol-gel network without drastic drop of ferroelectricity. A 2Pr of 32 μC/cm~2 was obtained in 0.96BLT-0.04PT thin film.
机译：系统地研究了钛酸铅（PbTiO_3：PT）溶胶-凝胶网络模板化铋层结构铁电（BLSF）薄膜的晶体结构和电学性质，其与钛酸铅溶胶-凝胶溶液的掺杂量和退火温度的关系。通过将钛酸铅溶胶-凝胶溶液添加到BLSF溶液中（例如钽酸锶铋（SrBi_2Ta_2O_9：SBT），钛酸铋（Bi_4Ti_3O_（12）：BiT）和镧掺杂的铋）来制备钛酸铅溶胶-凝胶模板化BLSF的起始溶液。钛酸盐（（Bi，La）_4Ti_3O_（12）：BLT）。将这些溶液旋涂在镀铂的硅片上，然后在热板上热解，然后通过RTA（快速热退火）在550℃到738℃结晶。将具有溅射的铂顶部电极的结晶膜进行后退火，以进行电性能测量。在SBT-PT的情况下，发现添加的钛酸铅So-gel网络对降低BLSF（m = 2）的结晶温度没有显着影响，但增强了烧绿石相。在BiT​​-PT的情况下，随着钛酸铅溶胶-凝胶网络数量的增加，铋层状结构在低至550℃的温度下得到确认。然而，不希望主要的层状结构m ＝ 3，而是意外的m（例如m ＝ 4或更高）。在BLT-PT的情况下，在适当的钛酸铅溶胶-凝胶网络量之内，最终可将BLSF（m = 3）的结晶温度降低至638℃，而铁电性没有急剧下降。在0.96BLT-0.04PT薄膜中获得了32μC/ cm〜2的2Pr。

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