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首页> 外文会议>Ferroelectric Thin Films XII >Microstructural and Electrical Characterization of (Ba,Sr)TiO_3 Thin Films Prepared by a New Carboxylate Free Chemical Solution Deposition (CSD) route
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Microstructural and Electrical Characterization of (Ba,Sr)TiO_3 Thin Films Prepared by a New Carboxylate Free Chemical Solution Deposition (CSD) route

机译：通过无羧酸盐化学溶液沉积（CSD）路线制备的（Ba，Sr）TiO_3薄膜的微结构和电学表征

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摘要

A new type of alkoxide precursor was developed to avoid the formation of the oxo-carbonate phase as an intermediate phase during crystallization. The precursors were synthesized from Ba metal, Sr metal and aminoethanol. The new precursors were found to be quite stable and soluble in a number of organic solvents. Films were prepared by depositing the precursor solution on Pt coated Silicon wafers and crystallized between 550 and 700℃. The films were found to crystallize only above 600℃. After crystallization Pt top electrodes were deposited by sputtering and lift off processing. FT-IR studies were performed on the films to check for any oxo-carbonate phase. Microstructural studies involving XRD, SEM and AFM were performed on the films. The films were found to have a dielectric constant of around 400 with a tunability of around 37%. The frequency and temperature dependence of the dielectric constant were also studied. In addition leakage studies were performed on the films at various temperatures.
机译：开发了一种新型的醇盐前体，以避免在结晶过程中形成氧碳酸盐相作为中间相。前驱体由钡金属，锶金属和氨基乙醇合成。发现新的前体非常稳定并且可溶于多种有机溶剂。通过将前体溶液沉积在涂有Pt的硅片上并在550至700℃之间结晶来制备薄膜。发现该膜仅在高于600℃时结晶。结晶后，通过溅射和剥离工艺沉积Pt顶部电极。在薄膜上进行了FT-IR研究，以检查是否有任何羰基碳酸盐相。在薄膜上进行了涉及XRD，SEM和AFM的微观结构研究。发现这些膜具有约400的介电常数和约37％的可调性。还研究了介电常数的频率和温度依赖性。另外，在各种温度下对膜进行了泄漏研究。

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