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首页> 外文会议>Ferroelectric Thin Films XII >Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb_5Ge_3O_(11) Thin Films for Memory Application
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Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb_5Ge_3O_(11) Thin Films for Memory Application

机译：记忆用铁电Pb_5Ge_3O_（11）薄膜的制备，微结构和物理特性

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We report sol-gel process of Pb_5Ge_3O_(11) (PGO) as well as the microstructure and physical properties of ferroelectric PGO films for memory applications. The PGO sol was prepared from lead acetate hydrate, germanium isopropoxide. and di(ethylene glycol) ethyl ether. The reactions taking place during the sol-gel process were examined in detail. Diethanolamine (DEA) was added to help maintain the desired species ratio and prevent germanium oxide precipitation. The preferred orientation of the PGO thin films was well controlled by the heating and reflux procedures in the sol-gel preparation process. Additionally, to examine the impact of post-deposition processing, selected samples were oxygen annealed at temperatures ranging from 450-650℃. The samples were characterized with X-ray diffraction (XRD), non-contact (planview) atomic force microscopy (NC-AFM). The resulting data indicate that the microstructure and physical properties of PGO films depend strongly on the precursor.
机译：我们报告了P​​b_5Ge_3O_（11）（PGO）的溶胶-凝胶过程以及用于存储器应用的铁电PGO薄膜的微观结构和物理性质。由乙酸铅水合物，异丙氧基锗制备PGO溶胶。和二（乙二醇）乙醚。详细检查了溶胶-凝胶过程中发生的反应。添加二乙醇胺（DEA）有助于维持所需的物种比率并防止氧化锗沉淀。通过溶胶-凝胶制备过程中的加热和回流程序可以很好地控制PGO薄膜的优选取向。另外，为了检查沉积后处理的影响，将选定的样品在450-650℃的温度下进行了氧气退火。通过X射线衍射（XRD），非接触式（平面）原子力显微镜（NC-AFM）对样品进行表征。所得数据表明，PGO薄膜的微观结构和物理性能在很大程度上取决于前体。

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