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Fabrication of Ru/Bi_(4-x)La_xTi_3O_(12)/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition

机译：金属有机化学气相沉积Ru膜制备Ru / Bi_（4-x）La_xTi_3O_（12）/ Ru铁电电容器结构

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A Ru/ Bi_(4-x)La_xTi_3O_(12)/Ru (Ru/BLT/Ru) capacitor structure with Ru top electrodes deposited by metalorganic chemical vapor deposition (MOCVD) was fabricated. On a Ru film deposited by MOCVD, BLT film was formed by a sol-gel method and crystallized in vacuum. Depositing a conformal Ru film on a BLT/Ru structure by MOCVD, Ru/BLT/Ru stack with smooth and flat surface was successfully formed. Then, ferroelectric Ru/BLT/Ru capacitors were fabricated through a dry etching process. It exhibited both good ferroelectric properties (2P_r=16 μC/cm~2) and low leakage current density (J=10~(-7) A/cm~2), suggesting that Ru film deposited by MOCVD showed sufficient properties for the tope electrode of Ru/BLT/Ru structures.

机译：制备了Ru / Bi_（4-x）La_xTi_3O_（12）/ Ru（Ru / BLT / Ru）电容器结构，该电容器结构具有通过金属有机化学气相沉积（MOCVD）沉积的Ru顶部电极。在通过MOCVD沉积的Ru膜上，通过溶胶-凝胶法形成BLT膜并在真空中结晶。通过MOCVD法在BLT / Ru结构上沉积保形Ru膜，成功形成了表面光滑平整的Ru / BLT / Ru叠层。然后，通过干法刻蚀工艺制造铁电Ru / BLT / Ru电容器。它具有良好的铁电性能（2P_r = 16μC/ cm〜2）和低漏电流密度（J = 10〜（-7）A / cm〜2），表明通过MOCVD沉积的Ru膜显示出足够的性能Ru / BLT / Ru结构的电极。

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《Ferroelectric Thin Films XII》|2003年|P.195-200|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Taisuke Furukawa; Takeharu Kuroiwa; Yoshihisa Fujisaki; Takehiko Sato; Hiroshi Ishiwara;
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RD Association for Future Electron Devices, 4259 Nagatsuta-cho Midori-ku, Yokohama 226-8503, JAPAN;

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正文语种 eng
中图分类材料;
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1. Leakage current characteristics of Pt/Bi_(4-x)La_xTi_3O_(12)/Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films [J] . Taisuke Furukawa, Takeharu Kuroiwa, Takehiko Sato, Journal of Applied Physics . 2006,第1期

机译：金属有机化学气相沉积Ru膜上制备的Pt / Bi_（4-x）La_xTi_3O_（12）/ Ru铁电电容器的漏电流特性
2. Chemical Vapor Deposition of Ru Bottom Electrode for Ferroelectric Bi_(4-x)La_xTi_3O_(12) Capacitors [J] . TAISUKE FURUKAWA, TAKEHARU KUROIWA, YOSHIHISA FUJISAKI Integrated Ferroelectrics . 2003,第1期

机译：Ru底电极的化学气相沉积铁电Bi_（4-x）La_xti_3O_（12）电容器
3. Leakage Current Suppression of Pt/Bi_(4-x)La_xTi_3O_(12)/Ru Capacitors by Post-Annealing of Ru Films [J] . T. FURUKAWA, T. KUROIWA, Y. FUJISAKI Integrated Ferroelectrics . 2004,第1期

机译：通过Ru膜的后退火抑制Pt / Bi_（4-x）La_xTi_3O_（12）/ Ru电容器的漏电流
4. Fabrication of Ru/Bi_(4-x)La_xTi_3O_(12)/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition [C] . Taisuke Furukawa, Takeharu Kuroiwa, Yoshihisa Fujisaki, MRS Meeting . 2004

机译：使用金属化学气相沉积的Ru膜的Ru / Bi_（4-X）La_Xti_3O_（12）/ Ru铁电电容器结构的制造
5. Chemical Control of the Oxidation State of the Metal and the Morphology of Nanostructures and Films Deposited by Metalorganic Vapor Deposition. [D] . Duan, Yichen. 2017

机译：化学控制金属的氧化态以及通过金属有机气相沉积沉积的纳米结构和薄膜的形态。
6. Ultra-high-performance core–shell structured Ru@Pt/C catalyst prepared by a facile pulse electrochemical deposition method [O] . Dan Chen, Yuexia Li, Shijun Liao, -1

机译：超高性能核-壳结构Ru @ Pt / C催化剂采用简便的脉冲电化学沉积法制备
7. Metallorganic chemical vapor deposition of metallic Ru thin films on biaxially textured Ni substrates using a Ru(EtCp)2 precursor [O] . Tian HY, Chan HLW, Choy CL, 2005

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8. Pulsed laser deposition of epitaxial Sr(Ru(sub x)Sn(sub 1-x))O(sub 3) thin film electrodes and KNbO(sub 3)/Sr(Ru(sub x)Sn(sub 1-x))O(sub 3) bilayers [R] . Christen, H. M. , Boatner, L. A. , English, L. Q. , 1995

机译：脉冲激光沉积外延sr（Ru（sub x）sn（sub 1-x））O（sub 3）薄膜电极和KNbO（sub 3）/ sr（Ru（sub x）sn（sub 1-x）） O（sub 3）双层

Fabrication of Ru/Bi_(4-x)La_xTi_3O_(12)/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition

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