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首页> 外文会议>Ferroelectric Thin Films XII >Growth Reorientation with the Annealing Temperature of SrBi_2Ta_2O_9 Films Deposited by PLD
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Growth Reorientation with the Annealing Temperature of SrBi_2Ta_2O_9 Films Deposited by PLD

机译：PLD沉积SrBi_2Ta_2O_9薄膜的生长取向与退火温度。

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摘要

Films of SrBi_2Ta_2O_9 (SBT) were grown on Pt/TiO_2/SiO_2/Si substrates by the pulsed laser deposition (PLD) technique. The deposits were made at temperatures between 570℃ and 715℃, and post-annealed at 750℃. The films grown at 610℃ show a (115) preferentially orientation with a small peaks associated to (00l) planes. At higher deposition temperatures, the (00l) peaks increase their intensity, a tendency that is intensified after the heat treatment at 750℃. However, when the films grown at 590-610℃ are heat-treated at 750℃, there is a reduction of the crystallites oriented in the (00l) direction, leading to an enhancement of the polarization, reflected in the maximum value of 2P_r = 9.1 μC/cm~2 and a coercive field, E_c, of 52.0 KV/cm.
机译：通过脉冲激光沉积（PLD）技术在Pt / TiO_2 / SiO_2 / Si衬底上生长了SrBi_2Ta_2O_9（SBT）薄膜。在570℃至715℃之间的温度下进行沉积，并在750℃下进行后退火。在610℃下生长的薄膜表现出（115）优先取向，并具有与（00l）平面相关的小峰。在较高的沉积温度下，（00l）峰的强度增加，这种趋势在750℃热处理后会增强。然而，当在590-610℃下生长的薄膜在750℃下进行热处理时，沿（00l）方向取向的微晶减少，导致极化增强，这在2P_r = 9.1μC/ cm〜2的矫顽力E_c为52.0 KV / cm。

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