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首页> 外文会议>Ferroelectric Thin Films XII >Frequency-Dependent Electromechanical Response in Ferroelectric Materials Measured via Piezoresponse Force Microscopy
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Frequency-Dependent Electromechanical Response in Ferroelectric Materials Measured via Piezoresponse Force Microscopy

机译：压电响应力显微镜测量的铁电材料中随频率变化的机电响应

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Local piezoelectric signal is measured via Piezoresponse Force Microscopy (PFM) in PbZr_(0.3)Ti_(0.7)O_3 films and PbZr_(1/3)Nb_(2/3)O_3-0.045PbTiO_3 single crystals. It is observed that the amplitude of piezoelectric response is almost independent on frequency for vertical (out of plane) signal and strongly decreases with increasing frequency in the range 10-100 kHz for lateral (in-plane) response. Moreover, the in-plane piezoelectric contrast is reversed when the measurements are done at high enough frequency (phase shift exceeds 90°). As a result, the in-plane polarization direction can be misinterpreted if the driving frequency exceeds certain level. For the explanation of observed effect a simple model is proposed that takes into account a possible slip between the conductive PFM tip and moving piezoelectric surface. The implications of the observed frequency-dependent contrast for the domain imaging in ferroelectric materials are discussed.
机译：通过压电响应力显微镜（PFM）在PbZr_（0.3）Ti_（0.7）O_3薄膜和PbZr_（1/3）Nb_（2/3）O_3-0.045PbTiO_3单晶中测量局部压电信号。可以看出，压电响应的幅度几乎与垂直（平面外）信号的频率无关，并且随着横向（平面内）响应在10-100 kHz范围内的频率增加而大幅降低。此外，当以足够高的频率（相移超过90°）进行测量时，面内压电对比度会反转。结果，如果驱动频率超过一定水平，则可能会误解面内极化方向。为了解释观察到的效果，提出了一个简单的模型，该模型考虑了导电PFM尖端和运动的压电表面之间可能的滑动。讨论了观察到的频率相关对比度对铁电材料中畴成像的影响。

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